This article presents the design and fabrication of a 6 W X-band hybrid Class-J power amplifier (PA) based on a bare die GaN on SiC HEMT by accurate implementing the transistor nonlinear capacitor effects. The transistor input capacitor is precisely...

This paper presents the first implementation of hybrid 8.8-9.6 GHz X-band class J power amplifier (PA)

designed with a GaN HEMT power transistor. High efficiency power amplifiers suffer from nonlinear performance and relatively low bandwidth...