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RISDC and RF characteristics of SiC MESFETs with different channel doping concentrations under the gate
Year: 2011
Abstract:
(NDS) channel doping levels are studied in details. Simulation results illustrate that a larger NSS compared to NDS improves the breakdown voltage. On the other hand, decreasing NSS, reduces the gate-source capacitance. A larger channel doping...
Characterizing the latency hiding ability of GPUs
Publisher: IEEE
Year: 2014
Charge-Plasma Based Process Variation Immune Junctionless Transistor
Publisher: IEEE
Year: 2014
Investigation of Sensor Performance in Accumulation- and Inversion-Mode Silicon Nanowire pH Sensors
Publisher: IEEE
Year: 2014