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Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

contributor authorKawanago, T.
contributor authorKakushima, K.
contributor authorKataoka, Yasuyuki
contributor authorNishiyama, A.
contributor authorSugii, Nobuyuki
contributor authorWakabayashi, H.
contributor authorTsutsui, K.
contributor authorNatori, K.
contributor authorIwai, Hisato
date accessioned2020-03-12T18:45:10Z
date available2020-03-12T18:45:10Z
date issued2014
identifier issn0018-9383
identifier other6732947.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/968954?locale-attribute=en&show=full
formatgeneral
languageEnglish
publisherIEEE
titleGate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT
typeJournal Paper
contenttypeMetadata Only
identifier padid8003172
subject keywordsIII-V semiconductors
subject keywordsSchottky gate field effect transistors
subject keywordsaluminium compounds
subject keywordsgallium compounds
subject keywordshigh electron mobility transistors
subject keywordsleakage currents
subject keywordsnickel
subject keywordstitanium compounds
subject keywordstungsten
subject keywordsvacancies (crystal)
subject keywordswide band gap semiconductors
subject keywordsAlGaN-GaN
subject keywordsC-V characteristics
subject keywordsNi
subject keywordsSchottky HEMT
subject keywordsSchottky gate
subject keywordsSchottky metals
subject keywordsTiN
subject keywordsW
subject keywordsdrain current collapse
subject keywordselectric field
subject keywordselectrical characteristics
subject keywordselectrically active defects
subject keywordselectron trapping
subject keywordsfrequency dispersion
subject keywordsgate edge
subject keywordsgate leakage cu
identifier doi10.1109/TED.2014.2299556
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue3
filesize1804095
citations0


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