Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs
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Year
: 2014DOI: 10.1109/LED.2013.2297433
Keyword(s): III-V semiconductors,MIS devices,UHF oscillators,aluminium compounds,direct coupled FET logic,gallium compounds,high electron mobility transistors,high-k dielectric thin films,microwave field effect transistors,millimetre wave field effect transistors,wide band gap semiconductors,51-stage ring oscillator,AlGaN-GaN,D-mode devices,E-D-mode AlGaN-GaN MIS-HEMT,E-mode devices,direct-coupled FET logic E-D MIS-HEMT inverter,enhancement-depletion-mode AlGaN-GaN MIS-HEMT,frequency 27.5
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Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs
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| contributor author | Yuechan Kong | |
| contributor author | Jianjun Zhou | |
| contributor author | Cen Kong | |
| contributor author | Youtao Zhang | |
| contributor author | Xun Dong | |
| contributor author | Haiyan Lu | |
| contributor author | Tangsheng Chen | |
| contributor author | Naibin Yang | |
| date accessioned | 2020-03-12T18:40:48Z | |
| date available | 2020-03-12T18:40:48Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6714368.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/966616 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Monolithic Integration of E/D-Mode AlGaN/GaN MIS-HEMTs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8000450 | |
| subject keywords | III-V semiconductors | |
| subject keywords | MIS devices | |
| subject keywords | UHF oscillators | |
| subject keywords | aluminium compounds | |
| subject keywords | direct coupled FET logic | |
| subject keywords | gallium compounds | |
| subject keywords | high electron mobility transistors | |
| subject keywords | high-k dielectric thin films | |
| subject keywords | microwave field effect transistors | |
| subject keywords | millimetre wave field effect transistors | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | 51-stage ring oscillator | |
| subject keywords | AlGaN-GaN | |
| subject keywords | D-mode devices | |
| subject keywords | E-D-mode AlGaN-GaN MIS-HEMT | |
| subject keywords | E-mode devices | |
| subject keywords | direct-coupled FET logic E-D MIS-HEMT inverter | |
| subject keywords | enhancement-depletion-mode AlGaN-GaN MIS-HEMT | |
| subject keywords | frequency 27.5 | |
| identifier doi | 10.1109/LED.2013.2297433 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 3 | |
| filesize | 1075602 | |
| citations | 0 |