Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2013.2295822
کلیدواژه(گان): MOSFET,aluminium compounds,germanium,germanium compounds,hole mobility,interface roughness,interface states,oxidation,surface roughness,transmission electron microscopy,Al<,sub>,2<,/sub>,O<,sub>,3<,/sub>,-GeO<,sub>,x<,/sub>,-Ge,MOS interface roughness,electrical properties,electron mobility,hole mobility,interface trap density,n-channel MOSFET,p-channel MOSFET,plasma post oxidation temperature,surface roughness,temperature 293 K to 298 K,temperature 3
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آمار بازدید
Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs
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| contributor author | Rui Zhang | |
| contributor author | Ju-Chin Lin | |
| contributor author | Xiao Yu | |
| contributor author | Takenaka, Mitsuru | |
| contributor author | Takagi, Shinichi | |
| date accessioned | 2020-03-12T18:39:13Z | |
| date available | 2020-03-12T18:39:13Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6704298.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/965720 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7999411 | |
| subject keywords | MOSFET | |
| subject keywords | aluminium compounds | |
| subject keywords | germanium | |
| subject keywords | germanium compounds | |
| subject keywords | hole mobility | |
| subject keywords | interface roughness | |
| subject keywords | interface states | |
| subject keywords | oxidation | |
| subject keywords | surface roughness | |
| subject keywords | transmission electron microscopy | |
| subject keywords | Al< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | O< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | -GeO< | |
| subject keywords | sub> | |
| subject keywords | x< | |
| subject keywords | /sub> | |
| subject keywords | -Ge | |
| subject keywords | MOS interface roughness | |
| subject keywords | electrical properties | |
| subject keywords | electron mobility | |
| subject keywords | hole mobility | |
| subject keywords | interface trap density | |
| subject keywords | n-channel MOSFET | |
| subject keywords | p-channel MOSFET | |
| subject keywords | plasma post oxidation temperature | |
| subject keywords | surface roughness | |
| subject keywords | temperature 293 K to 298 K | |
| subject keywords | temperature 3 | |
| identifier doi | 10.1109/TED.2013.2295822 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 2 | |
| filesize | 1416382 | |
| citations | 0 |