3.7 kV Vertical GaN PN Diodes
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: 2014شناسه الکترونیک: 10.1109/LED.2013.2294175
کلیدواژه(گان): MOCVD,avalanche breakdown,gallium compounds,power semiconductor diodes,semiconductor device measurement,semiconductor growth,wide band gap semiconductors,GaN,MOCVD,area differential specific on resistance,breakdown voltages,bulk substrates,low defect density,power electronics application,vertical GaN PN diodes,voltage 3.7 kV,wide band gap semiconductor devices,Gallium nitride,Schottky diodes,Silicon,Silicon carbide,Substrates,Gallium nitride,avalanche breakdown,power diod
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3.7 kV Vertical GaN PN Diodes
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| contributor author | Kizilyalli, Isik C. | |
| contributor author | Edwards, Andrew P. | |
| contributor author | Nie, Hui | |
| contributor author | Bour, David | |
| contributor author | Prunty, Thomas | |
| contributor author | Disney, Don | |
| date accessioned | 2020-03-12T18:36:22Z | |
| date available | 2020-03-12T18:36:22Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6684571.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/964098?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | 3.7 kV Vertical GaN PN Diodes | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7997544 | |
| subject keywords | MOCVD | |
| subject keywords | avalanche breakdown | |
| subject keywords | gallium compounds | |
| subject keywords | power semiconductor diodes | |
| subject keywords | semiconductor device measurement | |
| subject keywords | semiconductor growth | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | GaN | |
| subject keywords | MOCVD | |
| subject keywords | area differential specific on resistance | |
| subject keywords | breakdown voltages | |
| subject keywords | bulk substrates | |
| subject keywords | low defect density | |
| subject keywords | power electronics application | |
| subject keywords | vertical GaN PN diodes | |
| subject keywords | voltage 3.7 kV | |
| subject keywords | wide band gap semiconductor devices | |
| subject keywords | Gallium nitride | |
| subject keywords | Schottky diodes | |
| subject keywords | Silicon | |
| subject keywords | Silicon carbide | |
| subject keywords | Substrates | |
| subject keywords | Gallium nitride | |
| subject keywords | avalanche breakdown | |
| subject keywords | power diod | |
| identifier doi | 10.1109/LED.2013.2294175 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 2 | |
| filesize | 1110679 | |
| citations | 0 |