Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications
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: 2014شناسه الکترونیک: 10.1109/LED.2013.2293591
کلیدواژه(گان): amorphous semiconductors,elemental semiconductors,random-access storage,semiconductor diodes,silicon,Si,bidirectional diode,bipolar RRAM selector applications,circuit simulations,dopant activation anneal,dopant induced variability,fast switching speed,high current drive,high selectivity,metal diode,metal silicon metal selector,resistive RAM,resistive switching memory element,ultrascaled devices,ultrathin metal,ultrathin undoped amorphous silicon,Arrays,Doping,Metals,Perfo
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Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications
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contributor author | Leqi Zhang | |
contributor author | Redolfi, A. | |
contributor author | Adelmann, C. | |
contributor author | Clima, S. | |
contributor author | Radu, Iuliana P. | |
contributor author | Yang-Yin Chen | |
contributor author | Wouters, D.J. | |
contributor author | Groeseneken, Guido | |
contributor author | Jurczak, Malgorzata | |
contributor author | Govoreanu, B. | |
date accessioned | 2020-03-12T18:36:16Z | |
date available | 2020-03-12T18:36:16Z | |
date issued | 2014 | |
identifier issn | 0741-3106 | |
identifier other | 6684313.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/964038 | |
format | general | |
language | English | |
publisher | IEEE | |
title | Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications | |
type | Journal Paper | |
contenttype | Metadata Only | |
identifier padid | 7997466 | |
subject keywords | amorphous semiconductors | |
subject keywords | elemental semiconductors | |
subject keywords | random-access storage | |
subject keywords | semiconductor diodes | |
subject keywords | silicon | |
subject keywords | Si | |
subject keywords | bidirectional diode | |
subject keywords | bipolar RRAM selector applications | |
subject keywords | circuit simulations | |
subject keywords | dopant activation anneal | |
subject keywords | dopant induced variability | |
subject keywords | fast switching speed | |
subject keywords | high current drive | |
subject keywords | high selectivity | |
subject keywords | metal diode | |
subject keywords | metal silicon metal selector | |
subject keywords | resistive RAM | |
subject keywords | resistive switching memory element | |
subject keywords | ultrascaled devices | |
subject keywords | ultrathin metal | |
subject keywords | ultrathin undoped amorphous silicon | |
subject keywords | Arrays | |
subject keywords | Doping | |
subject keywords | Metals | |
subject keywords | Perfo | |
identifier doi | 10.1109/LED.2013.2293591 | |
journal title | Electron Device Letters, IEEE | |
journal volume | 35 | |
journal issue | 2 | |
filesize | 1289677 | |
citations | 0 |