nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits
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: 2014شناسه الکترونیک: 10.1109/TED.2013.2292551
کلیدواژه(گان): MOSFET,equivalent circuits,semiconductor device breakdown,semiconductor device reliability,N-channel field effect transistor device terminals,circuit design,equivalent circuit,mobility degradation,nMOS short channel device characteristics,reliability projections,soft oxide breakdown,threshold voltage shift,Degradation,Delays,Electric breakdown,Integrated circuit modeling,Integrated circuit reliability,Logic gates,Breakdown,SiON,dielectric,oxide,reliability,time-dependent-d
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nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits
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| contributor author | Nicollian, Paul E. | |
| contributor author | Min Chen | |
| contributor author | Yang Yang | |
| contributor author | Chancellor, Cathy /A/. | |
| contributor author | Reddy, Viswanath K. | |
| date accessioned | 2020-03-12T18:36:06Z | |
| date available | 2020-03-12T18:36:06Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6683066.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/963942 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | nMOS Short Channel Device Characteristics After Soft Oxide Breakdown and Implications for Reliability Projections and Circuits | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7997347 | |
| subject keywords | MOSFET | |
| subject keywords | equivalent circuits | |
| subject keywords | semiconductor device breakdown | |
| subject keywords | semiconductor device reliability | |
| subject keywords | N-channel field effect transistor device terminals | |
| subject keywords | circuit design | |
| subject keywords | equivalent circuit | |
| subject keywords | mobility degradation | |
| subject keywords | nMOS short channel device characteristics | |
| subject keywords | reliability projections | |
| subject keywords | soft oxide breakdown | |
| subject keywords | threshold voltage shift | |
| subject keywords | Degradation | |
| subject keywords | Delays | |
| subject keywords | Electric breakdown | |
| subject keywords | Integrated circuit modeling | |
| subject keywords | Integrated circuit reliability | |
| subject keywords | Logic gates | |
| subject keywords | Breakdown | |
| subject keywords | SiON | |
| subject keywords | dielectric | |
| subject keywords | oxide | |
| subject keywords | reliability | |
| subject keywords | time-dependent-d | |
| identifier doi | 10.1109/TED.2013.2292551 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 1 | |
| filesize | 802042 | |
| citations | 0 |