GeSn Heterojunction LEDs on Si Substrates

نویسنده:

ناشر:

IEEE

سال

: 2014

شناسه الکترونیک: 10.1109/LPT.2013.2291571

یو آر آی: http://libsearch.um.ac.ir:80/fum/handle/fum/962490

کلیدواژه(گان): electroluminescence,elemental semiconductors,energy gap,epitaxial layers,germanium,germanium compounds,integrated optics,light emitting diodes,molecular beam epitaxial growth,p-i-n diodes,photonic band gap,semiconductor doping,silicon,substrates,Ge,GeSn,Si,bandgap electroluminescence emission,bandgap energies,device structures,emission spectra,germanium virtual substrates,heterojunction LED,in-plane strain,in-situ doped pin junctions,light intensity,reciprocal space map

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GeSn Heterojunction LEDs on Si Substrates

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contributor author	Oehme, Michael
contributor author	Kostecki, Konrad
contributor author	Arguirov, Tzanimir
contributor author	Mussler, Gregor
contributor author	Kaiheng Ye
contributor author	Gollhofer, Martin
contributor author	Schmid, Maurizio
contributor author	Kaschel, Mathias
contributor author	Korner, Roman Alexander
contributor author	Kittler, M.
contributor author	Buca, Dan
contributor author	Kasper, Erich
contributor author	Schulze, J.
date accessioned	2020-03-12T18:33:32Z
date available	2020-03-12T18:33:32Z
date issued	2014
identifier issn	1041-1135
identifier other	6671355.pdf
identifier uri	http://libsearch.um.ac.ir:80/fum/handle/fum/962490?locale-attribute=fa
format	general
language	English
publisher	IEEE
title	GeSn Heterojunction LEDs on Si Substrates
type	Journal Paper
contenttype	Metadata Only
identifier padid	7995506
subject keywords	electroluminescence
subject keywords	elemental semiconductors
subject keywords	energy gap
subject keywords	epitaxial layers
subject keywords	germanium
subject keywords	germanium compounds
subject keywords	integrated optics
subject keywords	light emitting diodes
subject keywords	molecular beam epitaxial growth
subject keywords	p-i-n diodes
subject keywords	photonic band gap
subject keywords	semiconductor doping
subject keywords	silicon
subject keywords	substrates
subject keywords	Ge
subject keywords	GeSn
subject keywords	Si
subject keywords	bandgap electroluminescence emission
subject keywords	bandgap energies
subject keywords	device structures
subject keywords	emission spectra
subject keywords	germanium virtual substrates
subject keywords	heterojunction LED
subject keywords	in-plane strain
subject keywords	in-situ doped pin junctions
subject keywords	light intensity
subject keywords	reciprocal space map
identifier doi	10.1109/LPT.2013.2291571
journal title	Photonics Technology Letters, IEEE
journal volume	26
journal issue	2
filesize	437813
citations	0