Influence of AlN Thin Film as Thermal Interface Material on Thermal and Optical Properties of High-Power LED
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: 2014DOI: 10.1109/TDMR.2013.2285112
Keyword(s): III-V semiconductors,aluminium,aluminium compounds,heat sinks,light emitting diodes,semiconductor thin films,semiconductor-metal boundaries,thermal resistance,wide band gap semiconductors,Al,Al substrates,AlN thin film,AlN-Al,color rendering index,correlated color temperature,dual interface method,green LED,heat sink,high-power light-emitting diode application,junction temperature,luminosity,optical properties,peak wavelength,power 3 W,thermal interface material,thermal
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Influence of AlN Thin Film as Thermal Interface Material on Thermal and Optical Properties of High-Power LED
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| contributor author | Subramani, Siva | |
| contributor author | Devarajan, Mutharasu | |
| date accessioned | 2020-03-12T18:29:44Z | |
| date available | 2020-03-12T18:29:44Z | |
| date issued | 2014 | |
| identifier issn | 1530-4388 | |
| identifier other | 6626639.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/960421 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Influence of AlN Thin Film as Thermal Interface Material on Thermal and Optical Properties of High-Power LED | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 7993091 | |
| subject keywords | III-V semiconductors | |
| subject keywords | aluminium | |
| subject keywords | aluminium compounds | |
| subject keywords | heat sinks | |
| subject keywords | light emitting diodes | |
| subject keywords | semiconductor thin films | |
| subject keywords | semiconductor-metal boundaries | |
| subject keywords | thermal resistance | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | Al | |
| subject keywords | Al substrates | |
| subject keywords | AlN thin film | |
| subject keywords | AlN-Al | |
| subject keywords | color rendering index | |
| subject keywords | correlated color temperature | |
| subject keywords | dual interface method | |
| subject keywords | green LED | |
| subject keywords | heat sink | |
| subject keywords | high-power light-emitting diode application | |
| subject keywords | junction temperature | |
| subject keywords | luminosity | |
| subject keywords | optical properties | |
| subject keywords | peak wavelength | |
| subject keywords | power 3 W | |
| subject keywords | thermal interface material | |
| subject keywords | thermal | |
| identifier doi | 10.1109/TDMR.2013.2285112 | |
| journal title | Device and Materials Reliability, IEEE Transactions on | |
| journal volume | 14 | |
| journal issue | 1 | |
| filesize | 795784 | |
| citations | 0 |