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Coexistence of the δ l and δ T c flux pinning mechanisms in nano-Si-doped MgB 2

Author:
S R Ghorbani
,
X L Wang
,
M S A Hossain
,
S X Dou
,
Sung-Ik Lee
Year
: 2009
DOI: 10.1088/0953-2048/23/2/025019
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/571306
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    Coexistence of the δ l and δ T c flux pinning mechanisms in nano-Si-doped MgB 2

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contributor authorS R Ghorbani
contributor authorX L Wang
contributor authorM S A Hossain
contributor authorS X Dou
contributor authorSung-Ik Lee
date accessioned2020-03-11T15:14:22Z
date available2020-03-11T15:14:22Z
date issued2009
identifier otheruUPWFL2G2R38XXFlRUTPWvllpBW4EDX1cIqwm0ovTq7FtwQwcB.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/571306?locale-attribute=en
formatgeneral
languageEnglish
titleCoexistence of the δ l and δ T c flux pinning mechanisms in nano-Si-doped MgB 2
typeJournal Paper
contenttypeFulltext
contenttypeFulltext
identifier padid4412286
identifier doi10.1088/0953-2048/23/2/025019
journal titleSuperconductor Science and Technology
coverageAcademic
journal volume23
journal issue2
filesize354777
citations1
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