Calculation of High Field Electron Transport Properties in GaSb and GaAs
Year
: 2011
Abstract: Electron transport properties in GaSb and
GaAs are calculated for different temperature, doping
dependencies at high electric field applications. The
calculations are performed using a three valleys ensemble
Monte Carlo model that includes numerical formulations
of the phonon scattering rates and ionized impurity
scattering rates. For two materials, we find that electron
velocity overshoot only occurs when the electric field in
increased to a value above a certain critical field .This
critical field is strongly dependent on the material
parameters. Results from the two materials are finally
compared. The agreement with the available experimental
GaAs are calculated for different temperature, doping
dependencies at high electric field applications. The
calculations are performed using a three valleys ensemble
Monte Carlo model that includes numerical formulations
of the phonon scattering rates and ionized impurity
scattering rates. For two materials, we find that electron
velocity overshoot only occurs when the electric field in
increased to a value above a certain critical field .This
critical field is strongly dependent on the material
parameters. Results from the two materials are finally
compared. The agreement with the available experimental
Keyword(s): Monte Carlo method,ionized impurity
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Calculation of High Field Electron Transport Properties in GaSb and GaAs
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| contributor author | هادی عربشاهی | en |
| contributor author | Hadi Arabshahi | fa |
| date accessioned | 2020-06-06T14:36:13Z | |
| date available | 2020-06-06T14:36:13Z | |
| date issued | 2011 | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/3403634?locale-attribute=en | |
| description abstract | Electron transport properties in GaSb and GaAs are calculated for different temperature, doping dependencies at high electric field applications. The calculations are performed using a three valleys ensemble Monte Carlo model that includes numerical formulations of the phonon scattering rates and ionized impurity scattering rates. For two materials, we find that electron velocity overshoot only occurs when the electric field in increased to a value above a certain critical field .This critical field is strongly dependent on the material parameters. Results from the two materials are finally compared. The agreement with the available experimental | en |
| language | English | |
| title | Calculation of High Field Electron Transport Properties in GaSb and GaAs | en |
| type | Journal Paper | |
| contenttype | External Fulltext | |
| subject keywords | Monte Carlo method | en |
| subject keywords | ionized impurity | en |
| journal title | International Journal of Science and Advanced Technology | fa |
| pages | 26-29 | |
| journal volume | 1 | |
| journal issue | 4 | |
| identifier link | https://profdoc.um.ac.ir/paper-abstract-1023131.html | |
| identifier articleid | 1023131 |