A Shock-Capturing Upwind Discretization Method for Characterization of SiC MESFETs
Year
: 2008
Abstract: A finite difference shock-capturing upwind discretization method in two dimensions is
presented in detail for simulation of homogeneous and nonhomogeneous devices. The
model is based on the solutions to the highly coupled nonlinear partial differential equations
of the full hydrodynamic model. These solutions allow one to calculate the electron
drift velocity and other device parameters as a function of the applied electric field. The
hydrodynamic model is able to describe inertia effects which play an increasing role in
different fields of micro- and optoelectronics where simplified charge transport models
like the drift-diffusion model and the energy balance model are no longer applicable.
Results of numerical simulations are shown for a two-dimensional SiC MESFET device,
and are in fair agreement with other theoretical or experimental methods
presented in detail for simulation of homogeneous and nonhomogeneous devices. The
model is based on the solutions to the highly coupled nonlinear partial differential equations
of the full hydrodynamic model. These solutions allow one to calculate the electron
drift velocity and other device parameters as a function of the applied electric field. The
hydrodynamic model is able to describe inertia effects which play an increasing role in
different fields of micro- and optoelectronics where simplified charge transport models
like the drift-diffusion model and the energy balance model are no longer applicable.
Results of numerical simulations are shown for a two-dimensional SiC MESFET device,
and are in fair agreement with other theoretical or experimental methods
Keyword(s): Shock-capturing,discretization,hydrodynamic,drift-diffusion
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A Shock-Capturing Upwind Discretization Method for Characterization of SiC MESFETs
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| contributor author | هادی عربشاهی | en |
| contributor author | M. R. Benam | en |
| contributor author | Hadi Arabshahi | fa |
| date accessioned | 2020-06-06T13:54:07Z | |
| date available | 2020-06-06T13:54:07Z | |
| date issued | 2008 | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/3374001?locale-attribute=en | |
| description abstract | A finite difference shock-capturing upwind discretization method in two dimensions is presented in detail for simulation of homogeneous and nonhomogeneous devices. The model is based on the solutions to the highly coupled nonlinear partial differential equations of the full hydrodynamic model. These solutions allow one to calculate the electron drift velocity and other device parameters as a function of the applied electric field. The hydrodynamic model is able to describe inertia effects which play an increasing role in different fields of micro- and optoelectronics where simplified charge transport models like the drift-diffusion model and the energy balance model are no longer applicable. Results of numerical simulations are shown for a two-dimensional SiC MESFET device, and are in fair agreement with other theoretical or experimental methods | en |
| language | English | |
| title | A Shock-Capturing Upwind Discretization Method for Characterization of SiC MESFETs | en |
| type | Journal Paper | |
| contenttype | External Fulltext | |
| subject keywords | Shock-capturing | en |
| subject keywords | discretization | en |
| subject keywords | hydrodynamic | en |
| subject keywords | drift-diffusion | en |
| journal title | international Journal of Computational Methods | en |
| journal title | International Journal of Computational Methods | fa |
| pages | 341-349 | |
| journal volume | 5 | |
| journal issue | 2 | |
| identifier link | https://profdoc.um.ac.ir/paper-abstract-1009971.html | |
| identifier articleid | 1009971 |