An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT
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: 2018DOI: 10.1109/TED.2018.2831246
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An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT
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| contributor author | Jin Wei | |
| contributor author | Meng Zhang | |
| contributor author | Baikui Li | |
| contributor author | Xi Tang | |
| contributor author | Kevin J. Chen | |
| date accessioned | 2020-03-16T08:14:42Z | |
| date available | 2020-03-16T08:14:42Z | |
| date issued | 2018 | |
| identifier other | b79_AMbWqDYwTHEuDK5cpnUbHEzeCjys0l2PtQz2X8WPhhVQxb.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/2229264?locale-attribute=en | |
| format | general | |
| language | English | |
| title | An Analytical Investigation on the Charge Distribution and Gate Control in the Normally-Off GaN Double-Channel MOS-HEMT | |
| type | Journal Paper | |
| contenttype | Fulltext | |
| contenttype | Fulltext | |
| identifier padid | 14954177 | |
| identifier doi | 10.1109/TED.2018.2831246 | |
| journal title | IEEE Transactions on Electron Devices | |
| coverage | Academic | |
| pages | 2757-2764 | |
| journal volume | 65 | |
| journal issue | 7 | |
| filesize | 1995061 | |
| citations | 1 |