Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor
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: 2006DOI: 10.1109/ted.2006.882283
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Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor
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| contributor author | Akarvardar, K. | |
| contributor author | Cristoloveanu, S. | |
| contributor author | Gentil, P. | |
| date accessioned | 2020-03-14T03:11:40Z | |
| date available | 2020-03-14T03:11:40Z | |
| date issued | 2006 | |
| identifier other | 2YemyUQ6KUQrMqzGbzL9PpWkyAcFYtgZocHGJaR0My1pUkyPYN.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1523674?locale-attribute=en | |
| format | general | |
| language | English | |
| title | Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor | |
| type | Journal Paper | |
| contenttype | Fulltext | |
| contenttype | Fulltext | |
| identifier padid | 11127543 | |
| identifier doi | 10.1109/ted.2006.882283 | |
| coverage | Academic | |
| pages | 2569-2577 | |
| journal volume | 53 | |
| journal issue | 10 | |
| filesize | 684684 | |
| citations | 1 |