Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure
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: 2011DOI: 10.1109/ted.2011.2144987
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Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure
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| contributor author | Wei Cao | |
| contributor author | Yao, C.J. | |
| contributor author | Jiao, G.F. | |
| contributor author | Daming Huang | |
| contributor author | Yu, H.Y. | |
| contributor author | Ming-Fu Li | |
| date accessioned | 2020-03-13T14:38:59Z | |
| date available | 2020-03-13T14:38:59Z | |
| date issued | 2011 | |
| identifier other | 0HccOtzSrPcQaohtHT6WT_G3LSbWVwIRynbYVCucwCJSr7rEX1.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1337931?locale-attribute=en | |
| format | general | |
| language | English | |
| title | Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure | |
| type | Journal Paper | |
| contenttype | Fulltext | |
| contenttype | Fulltext | |
| identifier padid | 9965433 | |
| identifier doi | 10.1109/ted.2011.2144987 | |
| coverage | Academic | |
| pages | 2122-2126 | |
| journal volume | 58 | |
| journal issue | 7 | |
| filesize | 625661 | |
| citations | 1 |