•  English
    • Persian
    • English
  •   Login
  • Ferdowsi University of Mashhad
  • |
  • Information Center and Central Library
    • Persian
    • English
  • Home
  • Source Types
    • Journal Paper
    • Ebook
    • Conference Paper
    • Standard
    • Protocol
    • Thesis
  • Use Help
View Item 
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  • All Fields
  • Title
  • Author
  • Year
  • Publisher
  • Subject
  • Publication Title
  • ISSN
  • DOI
  • ISBN
Advanced Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

High-frequency performance of AlGaN channel HEMTs with high breakdown voltage

Author:
Nanjo, T.
,
Kurahashi, K.
,
Imai, A.
,
Suzuki, Yuya
,
Nakmura, M.
,
Suita, M.
,
Yagyu, E.
Publisher:
IET
Year
: 2014
DOI: 10.1049/el.2014.1874
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1147424
Keyword(s): III-V semiconductors,aluminium compounds,gallium compounds,high electron mobility transistors,microwave transistors,wide band gap semiconductors,AlGaN,AlGaN channel HEMT,GaN,GaN channel layer,alloy disorder scattering,breakdown voltage,electron saturation velocity,frequency 7 GHz,high electron mobility transistors,size 1 mum
Collections :
  • Latin Articles
  • Show Full MetaData Hide Full MetaData
  • Statistics

    High-frequency performance of AlGaN channel HEMTs with high breakdown voltage

Show full item record

contributor authorNanjo, T.
contributor authorKurahashi, K.
contributor authorImai, A.
contributor authorSuzuki, Yuya
contributor authorNakmura, M.
contributor authorSuita, M.
contributor authorYagyu, E.
date accessioned2020-03-13T00:27:23Z
date available2020-03-13T00:27:23Z
date issued2014
identifier issn0013-5194
identifier other6937254.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1147424?locale-attribute=en
formatgeneral
languageEnglish
publisherIET
titleHigh-frequency performance of AlGaN channel HEMTs with high breakdown voltage
typeJournal Paper
contenttypeMetadata Only
identifier padid8330377
subject keywordsIII-V semiconductors
subject keywordsaluminium compounds
subject keywordsgallium compounds
subject keywordshigh electron mobility transistors
subject keywordsmicrowave transistors
subject keywordswide band gap semiconductors
subject keywordsAlGaN
subject keywordsAlGaN channel HEMT
subject keywordsGaN
subject keywordsGaN channel layer
subject keywordsalloy disorder scattering
subject keywordsbreakdown voltage
subject keywordselectron saturation velocity
subject keywordsfrequency 7 GHz
subject keywordshigh electron mobility transistors
subject keywordssize 1 mum
identifier doi10.1049/el.2014.1874
journal titleElectronics Letters
journal volume50
journal issue22
filesize283455
citations0
  • About Us
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
DSpace software copyright © 2019-2022  DuraSpace