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Single Event Hard Errors in SRAM Under Heavy Ion Irradiation

Author:
Haran, Avner
,
Barak, Joseph
,
David, David
,
Keren, Eitan
,
Refaeli, Nati
,
Rapaport, Shimshon
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/TNS.2014.2345697
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1143786
Keyword(s): SRAM chips,ion beam effects,SRAM,gate oxide,heavy ion irradiation,microdose effect,single-event hard errors,static random-access memories,Annealing,Ions,Logic gates,Radiation effects,SDRAM,Transistors,Angular dependence,charge yield,microdose,radiation induced leakage current (RILC),single-event hard error (SHE),soft breakdown (SBD),stuck bits
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    Single Event Hard Errors in SRAM Under Heavy Ion Irradiation

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contributor authorHaran, Avner
contributor authorBarak, Joseph
contributor authorDavid, David
contributor authorKeren, Eitan
contributor authorRefaeli, Nati
contributor authorRapaport, Shimshon
date accessioned2020-03-13T00:21:36Z
date available2020-03-13T00:21:36Z
date issued2014
identifier issn0018-9499
identifier other6894241.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1143786?locale-attribute=en
formatgeneral
languageEnglish
publisherIEEE
titleSingle Event Hard Errors in SRAM Under Heavy Ion Irradiation
typeJournal Paper
contenttypeMetadata Only
identifier padid8326426
subject keywordsSRAM chips
subject keywordsion beam effects
subject keywordsSRAM
subject keywordsgate oxide
subject keywordsheavy ion irradiation
subject keywordsmicrodose effect
subject keywordssingle-event hard errors
subject keywordsstatic random-access memories
subject keywordsAnnealing
subject keywordsIons
subject keywordsLogic gates
subject keywordsRadiation effects
subject keywordsSDRAM
subject keywordsTransistors
subject keywordsAngular dependence
subject keywordscharge yield
subject keywordsmicrodose
subject keywordsradiation induced leakage current (RILC)
subject keywordssingle-event hard error (SHE)
subject keywordssoft breakdown (SBD)
subject keywordsstuck bits
identifier doi10.1109/TNS.2014.2345697
journal titleNuclear Science, IEEE Transactions on
journal volume61
journal issue5
filesize1283214
citations0
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