Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template
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سال
: 2014شناسه الکترونیک: 10.1109/JQE.2014.2353932
کلیدواژه(گان): III-V semiconductors,gallium compounds,light emitting diodes,semiconductor epitaxial layers,voids (solid),wide band gap semiconductors,GaN,GaN-based light-emitting diodes,LED,SiO-AlN-Al<,sub>,2<,/sub>,O<,sub>,3<,/sub>,air voids,internal quantum efficiency,light extraction efficiency,output power,pulsed growth epitaxial method,void shape,Crystals,Epitaxial growth,Epitaxial layers,Gallium nitride,III-V semiconductor materials,Light emitting diodes,Substrates
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Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template
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| contributor author | Yu-An Chen | |
| contributor author | Cheng-Huang Kuo | |
| contributor author | Li-Chuan Chang | |
| contributor author | Ji-Pu Wu | |
| date accessioned | 2020-03-13T00:21:33Z | |
| date available | 2020-03-13T00:21:33Z | |
| date issued | 2014 | |
| identifier issn | 0018-9197 | |
| identifier other | 6894153.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1143753?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8326391 | |
| subject keywords | III-V semiconductors | |
| subject keywords | gallium compounds | |
| subject keywords | light emitting diodes | |
| subject keywords | semiconductor epitaxial layers | |
| subject keywords | voids (solid) | |
| subject keywords | wide band gap semiconductors | |
| subject keywords | GaN | |
| subject keywords | GaN-based light-emitting diodes | |
| subject keywords | LED | |
| subject keywords | SiO-AlN-Al< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | O< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | air voids | |
| subject keywords | internal quantum efficiency | |
| subject keywords | light extraction efficiency | |
| subject keywords | output power | |
| subject keywords | pulsed growth epitaxial method | |
| subject keywords | void shape | |
| subject keywords | Crystals | |
| subject keywords | Epitaxial growth | |
| subject keywords | Epitaxial layers | |
| subject keywords | Gallium nitride | |
| subject keywords | III-V semiconductor materials | |
| subject keywords | Light emitting diodes | |
| subject keywords | Substrates | |
| identifier doi | 10.1109/JQE.2014.2353932 | |
| journal title | Quantum Electronics, IEEE Journal of | |
| journal volume | 50 | |
| journal issue | 10 | |
| filesize | 2559617 | |
| citations | 0 |