A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2014.2341315
کلیدواژه(گان): MOSFET,atomic force microscopy,hot carriers,negative bias temperature instability,stress analysis,CAFM,CHC stresses,MOSFET gate dielectric,bias temperature instability,channel hot-carrier stresses,conductive atomic force microscope,electrical stresses,gate oxide,nanoscale electrical properties,negative BTI stress,Current measurement,Degradation,Dielectrics,Logic gates,MOSFET,Nanoscale devices,Stress,Atomic force microscopy (AFM),MOSFET,channel hot-carrier (CHC) degradatio
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A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs
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| contributor author | Qian Wu | |
| contributor author | Bayerl, A. | |
| contributor author | Porti, M. | |
| contributor author | Martin-Martinez, J. | |
| contributor author | Lanza, Mario | |
| contributor author | Rodriguez, Roberto | |
| contributor author | Velayudhan, V. | |
| contributor author | Nafria, M. | |
| contributor author | Aymerich, X. | |
| contributor author | Bargallo Gonzalez, Mireia | |
| contributor author | Simoen, Eddy | |
| date accessioned | 2020-03-13T00:19:18Z | |
| date available | 2020-03-13T00:19:18Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6880443.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1142409?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8324936 | |
| subject keywords | MOSFET | |
| subject keywords | atomic force microscopy | |
| subject keywords | hot carriers | |
| subject keywords | negative bias temperature instability | |
| subject keywords | stress analysis | |
| subject keywords | CAFM | |
| subject keywords | CHC stresses | |
| subject keywords | MOSFET gate dielectric | |
| subject keywords | bias temperature instability | |
| subject keywords | channel hot-carrier stresses | |
| subject keywords | conductive atomic force microscope | |
| subject keywords | electrical stresses | |
| subject keywords | gate oxide | |
| subject keywords | nanoscale electrical properties | |
| subject keywords | negative BTI stress | |
| subject keywords | Current measurement | |
| subject keywords | Degradation | |
| subject keywords | Dielectrics | |
| subject keywords | Logic gates | |
| subject keywords | MOSFET | |
| subject keywords | Nanoscale devices | |
| subject keywords | Stress | |
| subject keywords | Atomic force microscopy (AFM) | |
| subject keywords | MOSFET | |
| subject keywords | channel hot-carrier (CHC) degradatio | |
| identifier doi | 10.1109/TED.2014.2341315 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 9 | |
| filesize | 894512 | |
| citations | 0 |