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Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C

contributor authorKim, Tony Tae-Hyoung
contributor authorNgoc Le Ba
date accessioned2020-03-13T00:15:54Z
date available2020-03-13T00:15:54Z
date issued2014
identifier issn0018-9200
identifier other6867375.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1140336?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleDesign of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C
typeJournal Paper
contenttypeMetadata Only
identifier padid8322667
subject keywordsSRAM chips
subject keywordslow-power electronics
subject keywordssilicon-on-insulator
subject keywordsSOI
subject keywordsSRAM
subject keywordsenergy 0.94 pJ
subject keywordsself-adjustable sensing margin enhancement
subject keywordssize 1.0 mum
subject keywordstemperature 300 C
subject keywordstemperature-aware bitline sensing margin enhancement technique
subject keywordstemperature-tracking control circuit
subject keywordsvoltage 2 V
subject keywordsvoltage 5 V
subject keywordsReliability
subject keywordsSRAM cells
subject keywordsTemperature distribution
subject keywordsTemperature sensors
subject keywordsBitline leakage
subject keywordsSOI technology
subject keywordsbitline sensing margin
subject keywordshigh temperature
subject keywordslow-voltage SRAM
subject keywordstemperature-aware
identifier doi10.1109/JSSC.2014.2338860
journal titleSolid-State Circuits, IEEE Journal of
journal volume49
journal issue11
filesize3268211
citations0


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