A Reliable Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>-HfO<sub>2</sub> Stack MIM Capacitor for High-Voltage Analog Applications
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2014.2332046
کلیدواژه(گان): MIM devices,alumina,capacitors,electric breakdown,hafnium compounds,reliability,silicon compounds,Si<,sub>,3<,/sub>,N<,sub>,4<,/sub>,-Al<,sub>,2<,/sub>,O<,sub>,3<,/sub>,-HfO<,sub>,2<,/sub>,TDDB,biasing condition,capacitance density,high-voltage analog applications,low-leakage characteristic,low-voltage applications,metal-insulator-metal capacitor,quadratic voltage coefficients,stack MIM capacitor,time 10 year,time 18.92 year,time-depend
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آمار بازدید
A Reliable Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>-HfO<sub>2</sub> Stack MIM Capacitor for High-Voltage Analog Applications
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| contributor author | Ching-Sung Ho | |
| contributor author | San-Jung Chang | |
| contributor author | Shih-Chang Chen | |
| contributor author | Liou, Juin J. | |
| contributor author | Hongge Li | |
| date accessioned | 2020-03-13T00:12:11Z | |
| date available | 2020-03-13T00:12:11Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6848842.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1138070 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | A Reliable Si<sub>3</sub>N<sub>4</sub>/Al<sub>2</sub>O<sub>3</sub>-HfO<sub>2</sub> Stack MIM Capacitor for High-Voltage Analog Applications | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8320073 | |
| subject keywords | MIM devices | |
| subject keywords | alumina | |
| subject keywords | capacitors | |
| subject keywords | electric breakdown | |
| subject keywords | hafnium compounds | |
| subject keywords | reliability | |
| subject keywords | silicon compounds | |
| subject keywords | Si< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | N< | |
| subject keywords | sub> | |
| subject keywords | 4< | |
| subject keywords | /sub> | |
| subject keywords | -Al< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | O< | |
| subject keywords | sub> | |
| subject keywords | 3< | |
| subject keywords | /sub> | |
| subject keywords | -HfO< | |
| subject keywords | sub> | |
| subject keywords | 2< | |
| subject keywords | /sub> | |
| subject keywords | TDDB | |
| subject keywords | biasing condition | |
| subject keywords | capacitance density | |
| subject keywords | high-voltage analog applications | |
| subject keywords | low-leakage characteristic | |
| subject keywords | low-voltage applications | |
| subject keywords | metal-insulator-metal capacitor | |
| subject keywords | quadratic voltage coefficients | |
| subject keywords | stack MIM capacitor | |
| subject keywords | time 10 year | |
| subject keywords | time 18.92 year | |
| subject keywords | time-depend | |
| identifier doi | 10.1109/TED.2014.2332046 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 8 | |
| filesize | 1802399 | |
| citations | 0 |