Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier
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سال
: 2014شناسه الکترونیک: 10.1109/TED.2014.2330374
کلیدواژه(گان): III-V semiconductors,gallium compounds,light emitting diodes,polarisation,quantum optics,EBL,GaN,PR-CMQB,efficiency droop,electron blocking layer,electron leakage suppression,high internal quantum efficiency,high light output power,hole injection efficiency,light-emitting diodes,polarization-reduced chirped multiquantum barrier,Aluminum gallium nitride,Charge carrier processes,Chirp,Gallium nitride,Light emitting diodes,Periodic structures,Power generation,Electron blockin
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Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier
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| contributor author | Yi An Yin | |
| contributor author | Naiyin Wang | |
| contributor author | Guanghan Fan | |
| contributor author | Shuti Li | |
| date accessioned | 2020-03-13T00:10:56Z | |
| date available | 2020-03-13T00:10:56Z | |
| date issued | 2014 | |
| identifier issn | 0018-9383 | |
| identifier other | 6843356.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1137348?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8319220 | |
| subject keywords | III-V semiconductors | |
| subject keywords | gallium compounds | |
| subject keywords | light emitting diodes | |
| subject keywords | polarisation | |
| subject keywords | quantum optics | |
| subject keywords | EBL | |
| subject keywords | GaN | |
| subject keywords | PR-CMQB | |
| subject keywords | efficiency droop | |
| subject keywords | electron blocking layer | |
| subject keywords | electron leakage suppression | |
| subject keywords | high internal quantum efficiency | |
| subject keywords | high light output power | |
| subject keywords | hole injection efficiency | |
| subject keywords | light-emitting diodes | |
| subject keywords | polarization-reduced chirped multiquantum barrier | |
| subject keywords | Aluminum gallium nitride | |
| subject keywords | Charge carrier processes | |
| subject keywords | Chirp | |
| subject keywords | Gallium nitride | |
| subject keywords | Light emitting diodes | |
| subject keywords | Periodic structures | |
| subject keywords | Power generation | |
| subject keywords | Electron blockin | |
| identifier doi | 10.1109/TED.2014.2330374 | |
| journal title | Electron Devices, IEEE Transactions on | |
| journal volume | 61 | |
| journal issue | 8 | |
| filesize | 1251267 | |
| citations | 0 |