Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED
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: 2014شناسه الکترونیک: 10.1109/LPT.2014.2329857
کلیدواژه(گان): Raman spectra,eutectic alloys,gold alloys,light emitting diodes,microassembling,photoluminescence,piezoelectric devices,piezoelectric semiconductors,piezoelectricity,quantum well devices,semiconductor quantum wells,solders,tin alloys,GaN-AuSn,GaN-based LED,Raman spectra,Si,compressive stress,current input,die-attached LED chips,die-attaching GaN-based light-emitting diodes,eutectic die-attachment,eutectic solder,external quantum efficiency,internal quantum efficiency enha
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Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED
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| contributor author | Yi Chin Lin | |
| contributor author | Wei Chih Liu | |
| contributor author | Chia Lun Chang | |
| contributor author | Chao Chi Chung | |
| contributor author | Yan Hao Chen | |
| contributor author | Te Yuan Chung | |
| contributor author | Cheng Yi Liu | |
| date accessioned | 2020-03-13T00:07:55Z | |
| date available | 2020-03-13T00:07:55Z | |
| date issued | 2014 | |
| identifier issn | 1041-1135 | |
| identifier other | 6828707.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1135523 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8317037 | |
| subject keywords | Raman spectra | |
| subject keywords | eutectic alloys | |
| subject keywords | gold alloys | |
| subject keywords | light emitting diodes | |
| subject keywords | microassembling | |
| subject keywords | photoluminescence | |
| subject keywords | piezoelectric devices | |
| subject keywords | piezoelectric semiconductors | |
| subject keywords | piezoelectricity | |
| subject keywords | quantum well devices | |
| subject keywords | semiconductor quantum wells | |
| subject keywords | solders | |
| subject keywords | tin alloys | |
| subject keywords | GaN-AuSn | |
| subject keywords | GaN-based LED | |
| subject keywords | Raman spectra | |
| subject keywords | Si | |
| subject keywords | compressive stress | |
| subject keywords | current input | |
| subject keywords | die-attached LED chips | |
| subject keywords | die-attaching GaN-based light-emitting diodes | |
| subject keywords | eutectic die-attachment | |
| subject keywords | eutectic solder | |
| subject keywords | external quantum efficiency | |
| subject keywords | internal quantum efficiency enha | |
| identifier doi | 10.1109/LPT.2014.2329857 | |
| journal title | Photonics Technology Letters, IEEE | |
| journal volume | 26 | |
| journal issue | 18 | |
| filesize | 328138 | |
| citations | 0 |