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Output-Conductance Transition-Free Method for Improving the Radio-Frequency Linearity of Silicon-on-Insulator MOSFET Circuits

contributor authorDaghighi, Arash
date accessioned2020-03-13T00:03:39Z
date available2020-03-13T00:03:39Z
date issued2014
identifier issn0018-9383
identifier other6815967.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1132953?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleOutput-Conductance Transition-Free Method for Improving the Radio-Frequency Linearity of Silicon-on-Insulator MOSFET Circuits
typeJournal Paper
contenttypeMetadata Only
identifier padid8314030
subject keywordsMOSFET circuits
subject keywordsUHF amplifiers
subject keywordsfast Fourier transforms
subject keywordsharmonic distortion
subject keywordsintermodulation distortion
subject keywordslow noise amplifiers
subject keywordssilicon-on-insulator
subject keywords3D numerical analysis
subject keywordsCBC LNAs
subject keywordsPD-SOI MOSFET circuits
subject keywordsRF circuits
subject keywordsTF SOI LNAs
subject keywordsTF body resistance extraction
subject keywordsTF circuit
subject keywordsTHD
subject keywordsbody-contacted devices
subject keywordscircuit SPICE models
subject keywordsconventional body-contacted LNAs
subject keywordsdevice carrier transport equations
subject keywordsfast Fourier transform
subject keywordsfrequency 2.4 GHz
subject keywordsharmonic distortion figures
subject keywordslow-noise amplifier
subject keywordsmixed-mod
identifier doi10.1109/TED.2014.2321419
journal titleElectron Devices, IEEE Transactions on
journal volume61
journal issue7
filesize2356184
citations0


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