InP-Based p-i-n-Photodiode Array Integrated With 90<inline-formula> <img src="/images/tex/226.gif" alt="^\\circ"> </inline-formula> Hybrid Using Butt-Joint Regrowth for Compact 100 Gb/s Coherent Receiver
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: 2014شناسه الکترونیک: 10.1109/JSTQE.2014.2321289
کلیدواژه(گان): III-V semiconductors,dark conductivity,indium compounds,integrated optoelectronics,optical receivers,p-i-n photodiodes,InP,InP-based p-i-n-photodiode array,bandwidth 26 GHz,bit rate 100 Gbit/s,butt-joint regrowth,common mode rejection ratio,compact coherent receiver,current 2.5 mA,demodulation,dual polarization quadrature phase-shift keying modulated signals,multimode interference structures,responsivity,stable dark current,voltage 1.6 V,Arrays,Dark current,Indium phosphide
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InP-Based p-i-n-Photodiode Array Integrated With 90<inline-formula> <img src="/images/tex/226.gif" alt="^\\circ"> </inline-formula> Hybrid Using Butt-Joint Regrowth for Compact 100 Gb/s Coherent Receiver
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| contributor author | Yagi, Hideki | |
| contributor author | Inoue, Naoko | |
| contributor author | Masuyama, Ryuji | |
| contributor author | Kikuchi, Takashi | |
| contributor author | Katsuyama, Tomokazu | |
| contributor author | Tateiwa, Yoshihiro | |
| contributor author | Uesaka, Katsumi | |
| contributor author | Yoneda, Yoshihiro | |
| contributor author | Takechi, Masaru | |
| contributor author | Shoji, Hajime | |
| date accessioned | 2020-03-13T00:01:02Z | |
| date available | 2020-03-13T00:01:02Z | |
| date issued | 2014 | |
| identifier issn | 1077-260X | |
| identifier other | 6808411.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1131434 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | InP-Based p-i-n-Photodiode Array Integrated With 90<inline-formula> <img src="/images/tex/226.gif" alt="^\\circ"> </inline-formula> Hybrid Using Butt-Joint Regrowth for Compact 100 Gb/s Coherent Receiver | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8312222 | |
| subject keywords | III-V semiconductors | |
| subject keywords | dark conductivity | |
| subject keywords | indium compounds | |
| subject keywords | integrated optoelectronics | |
| subject keywords | optical receivers | |
| subject keywords | p-i-n photodiodes | |
| subject keywords | InP | |
| subject keywords | InP-based p-i-n-photodiode array | |
| subject keywords | bandwidth 26 GHz | |
| subject keywords | bit rate 100 Gbit/s | |
| subject keywords | butt-joint regrowth | |
| subject keywords | common mode rejection ratio | |
| subject keywords | compact coherent receiver | |
| subject keywords | current 2.5 mA | |
| subject keywords | demodulation | |
| subject keywords | dual polarization quadrature phase-shift keying modulated signals | |
| subject keywords | multimode interference structures | |
| subject keywords | responsivity | |
| subject keywords | stable dark current | |
| subject keywords | voltage 1.6 V | |
| subject keywords | Arrays | |
| subject keywords | Dark current | |
| subject keywords | Indium phosphide | |
| identifier doi | 10.1109/JSTQE.2014.2321289 | |
| journal title | Selected Topics in Quantum Electronics, IEEE Journal of | |
| journal volume | 20 | |
| journal issue | 6 | |
| filesize | 6205123 | |
| citations | 0 |