Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs
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Year
: 2014DOI: 10.1109/LED.2014.2311453
Keyword(s): MOSFET,radiation hardening (electronics),silicon-on-insulator,PD device metamorphosis,PDSOI I-O nMOSFET,Si,back channel implantation,buried oxide,enhanced drain-induced barrier lowering effect,front channel device,negative threshold voltage shift,partially depleted silicon-on-insulator nMOSFET,radiation-induced coupling effect,size 130 nm,subthreshold slope increase,total-ionizing-dose-induced coupling effect,total-ionizing-dose-induced trapped charge,transconductance variation
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Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs
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| contributor author | Chao Peng | |
| contributor author | Zhiyuan Hu | |
| contributor author | Bingxu Ning | |
| contributor author | Huixiang Huang | |
| contributor author | Zhengxuan Zhang | |
| contributor author | Dawei Bi | |
| contributor author | Yunfei En | |
| contributor author | Shichang Zou | |
| date accessioned | 2020-03-12T23:54:19Z | |
| date available | 2020-03-12T23:54:19Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6777557.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1127532?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8307500 | |
| subject keywords | MOSFET | |
| subject keywords | radiation hardening (electronics) | |
| subject keywords | silicon-on-insulator | |
| subject keywords | PD device metamorphosis | |
| subject keywords | PDSOI I-O nMOSFET | |
| subject keywords | Si | |
| subject keywords | back channel implantation | |
| subject keywords | buried oxide | |
| subject keywords | enhanced drain-induced barrier lowering effect | |
| subject keywords | front channel device | |
| subject keywords | negative threshold voltage shift | |
| subject keywords | partially depleted silicon-on-insulator nMOSFET | |
| subject keywords | radiation-induced coupling effect | |
| subject keywords | size 130 nm | |
| subject keywords | subthreshold slope increase | |
| subject keywords | total-ionizing-dose-induced coupling effect | |
| subject keywords | total-ionizing-dose-induced trapped charge | |
| subject keywords | transconductance variation | |
| identifier doi | 10.1109/LED.2014.2311453 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 5 | |
| filesize | 1215468 | |
| citations | 0 |