High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure
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Year
: 2014DOI: 10.1109/LED.2014.2305665
Keyword(s): etching,gallium compounds,indium compounds,oscillators,thin film transistors,11-stage ring oscillator,DG amorphous-indium-gallium-zinc-oxide thin-film transistor,DG-driven,InGaZnO,SG-driven,back-channel-etching,bulk-accumulation,frequency 334 kHz,frequency 781 kHz,high-speed dual-gate TFT-based circuit,single-gate-driven,top-gate offset structure,Capacitance,Inverters,Logic gates,Switching circuits,Thin film transistors,a-IGZO TFTs,dual gate,inverter,ring oscillator
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High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure
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| contributor author | Xiuling Li | |
| contributor author | Di Geng | |
| contributor author | Mativenga, Mallory | |
| contributor author | Jin Jang | |
| date accessioned | 2020-03-12T23:48:30Z | |
| date available | 2020-03-12T23:48:30Z | |
| date issued | 2014 | |
| identifier issn | 0741-3106 | |
| identifier other | 6747997.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1124069?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure | |
| type | Journal Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8303585 | |
| subject keywords | etching | |
| subject keywords | gallium compounds | |
| subject keywords | indium compounds | |
| subject keywords | oscillators | |
| subject keywords | thin film transistors | |
| subject keywords | 11-stage ring oscillator | |
| subject keywords | DG amorphous-indium-gallium-zinc-oxide thin-film transistor | |
| subject keywords | DG-driven | |
| subject keywords | InGaZnO | |
| subject keywords | SG-driven | |
| subject keywords | back-channel-etching | |
| subject keywords | bulk-accumulation | |
| subject keywords | frequency 334 kHz | |
| subject keywords | frequency 781 kHz | |
| subject keywords | high-speed dual-gate TFT-based circuit | |
| subject keywords | single-gate-driven | |
| subject keywords | top-gate offset structure | |
| subject keywords | Capacitance | |
| subject keywords | Inverters | |
| subject keywords | Logic gates | |
| subject keywords | Switching circuits | |
| subject keywords | Thin film transistors | |
| subject keywords | a-IGZO TFTs | |
| subject keywords | dual gate | |
| subject keywords | inverter | |
| subject keywords | ring oscillator | |
| identifier doi | 10.1109/LED.2014.2305665 | |
| journal title | Electron Device Letters, IEEE | |
| journal volume | 35 | |
| journal issue | 4 | |
| filesize | 635491 | |
| citations | 0 |