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In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS

date accessioned2020-03-12T23:28:25Z
date available2020-03-12T23:28:25Z
date issued2014
identifier other6894409.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1112951?locale-attribute=fa&show=full
formatgeneral
languageEnglish
publisherIEEE
titleIn-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS
typeConference Paper
contenttypeMetadata Only
identifier padid8281934
subject keywordspublic domain software
subject keywordssoftware metrics
subject keywordssoftware reusability
subject keywordssource code (software)
subject keywordsLCS-based source code similarity
subject keywordsautomatic source code reuse relationship identification
subject keywordslongest common subsequence
subject keywordsopen source software projects
subject keywordspair identification
subject keywordssimilarity metric
subject keywordssource file reuse
subject keywordsEducational institutions
subject keywordsHistory
subject keywordsLibraries
subject keywordsMeasurement
subject keywordsParticle separators
subject keywordsSoftware
subject keywordsWhite spaces
subject keywordsempirical study
subject keywordssoftware reuse
subject keywordssource code similarity
subject keywordsversion control system
identifier doi10.1109/SCAM.2014.17
journal titleLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
filesize975750
citations0
contributor rawauthorMiyoshi, H. , Ueno, T. , Akiyama, K. , Hirota, Y. , Kaitsuka, T.


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