Design of a 32nm independent gate FinFET based SRAM cell with improved noise margin for low power application
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: 2014شناسه الکترونیک: 10.1109/IWAENC.2014.6954306
کلیدواژه(گان): Acoustics,Conferences,Databases,Estimation,Noise,Speech,Training,C50,CART,DBN,Linear regression
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Design of a 32nm independent gate FinFET based SRAM cell with improved noise margin for low power application
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| contributor author | Rahaman, M. , Mahapatra, R. | |
| date accessioned | 2020-03-12T23:27:19Z | |
| date available | 2020-03-12T23:27:19Z | |
| date issued | 2014 | |
| identifier other | 6892721.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1112247?locale-attribute=fa | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Design of a 32nm independent gate FinFET based SRAM cell with improved noise margin for low power application | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8281152 | |
| subject keywords | Acoustics | |
| subject keywords | Conferences | |
| subject keywords | Databases | |
| subject keywords | Estimation | |
| subject keywords | Noise | |
| subject keywords | Speech | |
| subject keywords | Training | |
| subject keywords | C50 | |
| subject keywords | CART | |
| subject keywords | DBN | |
| subject keywords | Linear regression | |
| identifier doi | 10.1109/IWAENC.2014.6954306 | |
| journal title | lectronics and Communication Systems (ICECS), 2014 International Conference on | |
| filesize | 1298421 | |
| citations | 1 |