Estimations, convergences and comparisons on fuzzy integrals of Sugeno, Choquet and Gould type
Author:
Publisher:
Year
: 2014DOI: 10.1109/ESSDERC.2014.6948816
Keyword(s): III-V semiconductors,MOSFET,Poisson equation,Schrodinger equation,indium compounds,semiconductor device models,Ha&,#x0308,nsch model,InAs,MOSFET subthreshold regime,Poisson-Schro&,#x0308,dinger simulations,bulk subthreshold swing classical model,double gate,double-gate devices,inversion charge,long-channel bulk device,quantum effects,quantum modulation,subtreshold regime,threshold voltage roll-off,Doping,Equations,MOSFET,Mathematical model,Silicon,Threshold voltage
Collections
:
-
Statistics
Estimations, convergences and comparisons on fuzzy integrals of Sugeno, Choquet and Gould type
Show full item record
| contributor author | Croitoru, A. , Mastorakis, N. | |
| date accessioned | 2020-03-12T23:25:47Z | |
| date available | 2020-03-12T23:25:47Z | |
| date issued | 2014 | |
| identifier other | 6891590.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1111269?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Estimations, convergences and comparisons on fuzzy integrals of Sugeno, Choquet and Gould type | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8280068 | |
| subject keywords | III-V semiconductors | |
| subject keywords | MOSFET | |
| subject keywords | Poisson equation | |
| subject keywords | Schrodinger equation | |
| subject keywords | indium compounds | |
| subject keywords | semiconductor device models | |
| subject keywords | Ha& | |
| subject keywords | #x0308 | |
| subject keywords | nsch model | |
| subject keywords | InAs | |
| subject keywords | MOSFET subthreshold regime | |
| subject keywords | Poisson-Schro& | |
| subject keywords | #x0308 | |
| subject keywords | dinger simulations | |
| subject keywords | bulk subthreshold swing classical model | |
| subject keywords | double gate | |
| subject keywords | double-gate devices | |
| subject keywords | inversion charge | |
| subject keywords | long-channel bulk device | |
| subject keywords | quantum effects | |
| subject keywords | quantum modulation | |
| subject keywords | subtreshold regime | |
| subject keywords | threshold voltage roll-off | |
| subject keywords | Doping | |
| subject keywords | Equations | |
| subject keywords | MOSFET | |
| subject keywords | Mathematical model | |
| subject keywords | Silicon | |
| subject keywords | Threshold voltage | |
| identifier doi | 10.1109/ESSDERC.2014.6948816 | |
| journal title | uzzy Systems (FUZZ-IEEE), 2014 IEEE International Conference on | |
| filesize | 599833 | |
| citations | 0 |