In depth characterization of hole transport in 14nm FD-SOI pMOS devices
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سال
: 2014شناسه الکترونیک: 10.1109/ICRAIE.2014.6909157
کلیدواژه(گان): Carbon dioxide,n Educational institutions,n Lead,n Monitoring,n Object recognition,n Pollution,n Standards,n Arduino,n Gas Sensor,n RFlD,n WS,n loT
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In depth characterization of hole transport in 14nm FD-SOI pMOS devices
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contributor author | Shin, M. | |
contributor author | Shi, M. | |
contributor author | Mouis, M. | |
contributor author | Cros, A. | |
contributor author | Josse, E. | |
contributor author | Kim, G.T. | |
contributor author | Ghibaudo, G. | |
date accessioned | 2020-03-12T22:53:15Z | |
date available | 2020-03-12T22:53:15Z | |
date issued | 2014 | |
identifier other | 7028215.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1098003 | |
format | general | |
language | English | |
publisher | IEEE | |
title | In depth characterization of hole transport in 14nm FD-SOI pMOS devices | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8239018 | |
subject keywords | Carbon dioxide | |
subject keywords | n Educational institutions | |
subject keywords | n Lead | |
subject keywords | n Monitoring | |
subject keywords | n Object recognition | |
subject keywords | n Pollution | |
subject keywords | n Standards | |
subject keywords | n Arduino | |
subject keywords | n Gas Sensor | |
subject keywords | n RFlD | |
subject keywords | n WS | |
subject keywords | n loT | |
identifier doi | 10.1109/ICRAIE.2014.6909157 | |
journal title | OI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE | |
filesize | 800961 | |
citations | 0 |