Development of Attitude Determination System for Moving Carrier Based on MEMS Sensors
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سال
: 2014شناسه الکترونیک: 10.1109/APS.2014.6904370
کلیدواژه(گان): III-V semiconductors,n aluminium compounds,n gallium compounds,n high electron mobility transistors,n semiconductor device models,n terahertz wave generation,n two-dimensional electron gas,n wide band gap semiconductors,n 2DEG channel modulation,n GaN-AlGaN,n THz signal generation,n electrical parameters,n free space radiation,n geometrical parameters,n grating periods,n high electron mobility transistors,n plasma mode HEMT,n resonance frequency
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آمار بازدید
Development of Attitude Determination System for Moving Carrier Based on MEMS Sensors
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| contributor author | Jia, Tianxiang | |
| contributor author | Liu, Yanan | |
| date accessioned | 2020-03-12T22:47:02Z | |
| date available | 2020-03-12T22:47:02Z | |
| date issued | 2014 | |
| identifier other | 7023622.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1094446 | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Development of Attitude Determination System for Moving Carrier Based on MEMS Sensors | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8234302 | |
| subject keywords | III-V semiconductors | |
| subject keywords | n aluminium compounds | |
| subject keywords | n gallium compounds | |
| subject keywords | n high electron mobility transistors | |
| subject keywords | n semiconductor device models | |
| subject keywords | n terahertz wave generation | |
| subject keywords | n two-dimensional electron gas | |
| subject keywords | n wide band gap semiconductors | |
| subject keywords | n 2DEG channel modulation | |
| subject keywords | n GaN-AlGaN | |
| subject keywords | n THz signal generation | |
| subject keywords | n electrical parameters | |
| subject keywords | n free space radiation | |
| subject keywords | n geometrical parameters | |
| subject keywords | n grating periods | |
| subject keywords | n high electron mobility transistors | |
| subject keywords | n plasma mode HEMT | |
| subject keywords | n resonance frequency | |
| identifier doi | 10.1109/APS.2014.6904370 | |
| journal title | omputational Science and Engineering (CSE), 2014 IEEE 17th International Conference on | |
| filesize | 2442284 | |
| citations | 0 |