•  English
    • Persian
    • English
  •   Login
  • Ferdowsi University of Mashhad
  • |
  • Information Center and Central Library
    • Persian
    • English
  • Home
  • Source Types
    • Journal Paper
    • Ebook
    • Conference Paper
    • Standard
    • Protocol
    • Thesis
  • Use Help
View Item 
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  • All Fields
  • Title
  • Author
  • Year
  • Publisher
  • Subject
  • Publication Title
  • ISSN
  • DOI
  • ISBN
Advanced Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

Challenges for InGaAs n-MOSFETs in the future generation sub-10nm CMOS logic devices

Author:
Ming-Fu Li
,
Shenwei Li
,
Daming Huang
,
Ye, P.D.
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/EuCAP.2014.6902325
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1092643
Keyword(s): anisotropic media,n dielectric function,n dielectric polarisation,n electromagnetic metamaterials,n magnetic anisotropy,n magnetoelectric effects,n permittivity,n Floquet representation,n artificial magnetism,n bianisotropy,n closed-form expressions,n higher-order spatial dispersion effects,n local effective electromagnetic constitutive parameters,n local nondispersive permittivity,n magnetoelectric coupling parameters,n nonlocal spatially dispersive
Collections :
  • Latin Articles
  • Show Full MetaData Hide Full MetaData
  • Statistics

    Challenges for InGaAs n-MOSFETs in the future generation sub-10nm CMOS logic devices

Show full item record

contributor authorMing-Fu Li
contributor authorShenwei Li
contributor authorDaming Huang
contributor authorYe, P.D.
date accessioned2020-03-12T22:43:52Z
date available2020-03-12T22:43:52Z
date issued2014
identifier other7021326.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1092643?locale-attribute=en
formatgeneral
languageEnglish
publisherIEEE
titleChallenges for InGaAs n-MOSFETs in the future generation sub-10nm CMOS logic devices
typeConference Paper
contenttypeMetadata Only
identifier padid8231830
subject keywordsanisotropic media
subject keywordsn dielectric function
subject keywordsn dielectric polarisation
subject keywordsn electromagnetic metamaterials
subject keywordsn magnetic anisotropy
subject keywordsn magnetoelectric effects
subject keywordsn permittivity
subject keywordsn Floquet representation
subject keywordsn artificial magnetism
subject keywordsn bianisotropy
subject keywordsn closed-form expressions
subject keywordsn higher-order spatial dispersion effects
subject keywordsn local effective electromagnetic constitutive parameters
subject keywordsn local nondispersive permittivity
subject keywordsn magnetoelectric coupling parameters
subject keywordsn nonlocal spatially dispersive
identifier doi10.1109/EuCAP.2014.6902325
journal titleolid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
filesize2789797
citations0
  • About Us
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
DSpace software copyright © 2019-2022  DuraSpace