•  English
    • Persian
    • English
  •   Login
  • Ferdowsi University of Mashhad
  • |
  • Information Center and Central Library
    • Persian
    • English
  • Home
  • Source Types
    • Journal Paper
    • Ebook
    • Conference Paper
    • Standard
    • Protocol
    • Thesis
  • Use Help
View Item 
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  •   FUM Digital Library
  • Fum
  • Articles
  • Latin Articles
  • View Item
  • All Fields
  • Title
  • Author
  • Year
  • Publisher
  • Subject
  • Publication Title
  • ISSN
  • DOI
  • ISBN
Advanced Search
JavaScript is disabled for your browser. Some features of this site may not work without it.

Effect of Neural Network based phonetic feature segmentation in ASR

Author:
Kotwal, Mohammed Rokibul Alam
,
Hassan, Foyzul
,
Huda, Mohammad Nurul
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/ISTDM.2014.6874666
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1074788
Keyword(s): crystal structure,n germanium compounds,n lattice constants,n semiconductor epitaxial layers,n semiconductor growth,n semiconductor materials,n sputter deposition,n tin compounds,n Ge,n Ge(001) substrate,n Ge<,sub>,1-x-y<,/sub>,Sn<,sub>,x<,/sub>,C<,sub>,y<,/sub>,n crystalline properties,n energy band engineering,n epitaxial growth,n epitaxial temperature,n group IV semiconductor materials,n lattice parameter,n nanoelectr
Collections :
  • Latin Articles
  • Show Full MetaData Hide Full MetaData
  • Statistics

    Effect of Neural Network based phonetic feature segmentation in ASR

Show full item record

contributor authorKotwal, Mohammed Rokibul Alam
contributor authorHassan, Foyzul
contributor authorHuda, Mohammad Nurul
date accessioned2020-03-12T22:12:01Z
date available2020-03-12T22:12:01Z
date issued2014
identifier other6997306.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1074788?locale-attribute=en
formatgeneral
languageEnglish
publisherIEEE
titleEffect of Neural Network based phonetic feature segmentation in ASR
typeConference Paper
contenttypeMetadata Only
identifier padid8210928
subject keywordscrystal structure
subject keywordsn germanium compounds
subject keywordsn lattice constants
subject keywordsn semiconductor epitaxial layers
subject keywordsn semiconductor growth
subject keywordsn semiconductor materials
subject keywordsn sputter deposition
subject keywordsn tin compounds
subject keywordsn Ge
subject keywordsn Ge(001) substrate
subject keywordsn Ge<
subject keywordssub>
subject keywords1-x-y<
subject keywords/sub>
subject keywordsSn<
subject keywordssub>
subject keywordsx<
subject keywords/sub>
subject keywordsC<
subject keywordssub>
subject keywordsy<
subject keywords/sub>
subject keywordsn crystalline properties
subject keywordsn energy band engineering
subject keywordsn epitaxial growth
subject keywordsn epitaxial temperature
subject keywordsn group IV semiconductor materials
subject keywordsn lattice parameter
subject keywordsn nanoelectr
identifier doi10.1109/ISTDM.2014.6874666
journal titleomputer and Information Technology (ICCIT), 2013 16th International Conference on
filesize1114895
citations0
  • About Us
نرم افزار کتابخانه دیجیتال "دی اسپیس" فارسی شده توسط یابش برای کتابخانه های ایرانی | تماس با یابش
DSpace software copyright © 2019-2022  DuraSpace