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Table of contents

Publisher:
IEEE
Year
: 2014
DOI: 10.1109/IWJT.2014.6842058
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1068020
Keyword(s): Ge-Si alloys,n Schottky barriers,n electrical contacts,n elemental semiconductors,n hole mobility,n nickel compounds,n semiconductor epitaxial layers,n silicon,n Ni<,sub>,5<,/sub>,(SiGe)<,sub>,3<,/sub>,n NiSi<,sub>,2<,/sub>,n Schottky barrier,n SiGe,n compressive strain,n epitaxial layers,n hole mobility SiGe layers,n multi thin aluminium layers,n multi thin nickel layers,n silicidation,n size 14 nm to 33 nm,n tem
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date accessioned2020-03-12T22:00:11Z
date available2020-03-12T22:00:11Z
date issued2014
identifier other6970251.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1068020?locale-attribute=en
formatgeneral
languageEnglish
publisherIEEE
titleTable of contents
typeConference Paper
contenttypeMetadata Only
identifier padid8202967
subject keywordsGe-Si alloys
subject keywordsn Schottky barriers
subject keywordsn electrical contacts
subject keywordsn elemental semiconductors
subject keywordsn hole mobility
subject keywordsn nickel compounds
subject keywordsn semiconductor epitaxial layers
subject keywordsn silicon
subject keywordsn Ni<
subject keywordssub>
subject keywords5<
subject keywords/sub>
subject keywords(SiGe)<
subject keywordssub>
subject keywords3<
subject keywords/sub>
subject keywordsn NiSi<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywordsn Schottky barrier
subject keywordsn SiGe
subject keywordsn compressive strain
subject keywordsn epitaxial layers
subject keywordsn hole mobility SiGe layers
subject keywordsn multi thin aluminium layers
subject keywordsn multi thin nickel layers
subject keywordsn silicidation
subject keywordsn size 14 nm to 33 nm
subject keywordsn tem
identifier doi10.1109/IWJT.2014.6842058
journal titlelobal Humanitarian Technology Conference (GHTC), 2014 IEEE
filesize218828
citations0
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