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Design of Europeana Cloud technical infrastructure

Author:
Kats, Pavel
,
Mielnicki, Marcin
,
Knoth, Petr
,
Muhr, Markus
,
Mamakis, Georgios
,
Werla, Marcin
Publisher:
IEEE
Year
: 2014
DOI: 10.1109/IWJT.2014.6842048
URI: http://libsearch.um.ac.ir:80/fum/handle/fum/1068010
Keyword(s): Fermi level,n MOSFET,n carrier density,n germanium,n ion implantation,n laser beam annealing,n ohmic contacts,n p-n junctions,n rapid thermal annealing,n silicon compounds,n ytterbium compounds,n Fermi level pinning,n Ge,n RTA,n SiO<,sub>,2<,/sub>,-Si,n YbGe<,sub>,2-x<,/sub>,-Ge,n carrier density,n fast impurity diffusion,n high mobility CMOS,n high mobility nMOSFET,n ion implantation,n junction ideality factor,n l
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    Design of Europeana Cloud technical infrastructure

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contributor authorKats, Pavel
contributor authorMielnicki, Marcin
contributor authorKnoth, Petr
contributor authorMuhr, Markus
contributor authorMamakis, Georgios
contributor authorWerla, Marcin
date accessioned2020-03-12T22:00:11Z
date available2020-03-12T22:00:11Z
date issued2014
identifier other6970240.pdf
identifier urihttp://libsearch.um.ac.ir:80/fum/handle/fum/1068010
formatgeneral
languageEnglish
publisherIEEE
titleDesign of Europeana Cloud technical infrastructure
typeConference Paper
contenttypeMetadata Only
identifier padid8202950
subject keywordsFermi level
subject keywordsn MOSFET
subject keywordsn carrier density
subject keywordsn germanium
subject keywordsn ion implantation
subject keywordsn laser beam annealing
subject keywordsn ohmic contacts
subject keywordsn p-n junctions
subject keywordsn rapid thermal annealing
subject keywordsn silicon compounds
subject keywordsn ytterbium compounds
subject keywordsn Fermi level pinning
subject keywordsn Ge
subject keywordsn RTA
subject keywordsn SiO<
subject keywordssub>
subject keywords2<
subject keywords/sub>
subject keywords-Si
subject keywordsn YbGe<
subject keywordssub>
subject keywords2-x<
subject keywords/sub>
subject keywords-Ge
subject keywordsn carrier density
subject keywordsn fast impurity diffusion
subject keywordsn high mobility CMOS
subject keywordsn high mobility nMOSFET
subject keywordsn ion implantation
subject keywordsn junction ideality factor
subject keywordsn l
identifier doi10.1109/IWJT.2014.6842048
journal titleigital Libraries (JCDL), 2014 IEEE/ACM Joint Conference on
filesize148527
citations0
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