Characterization of nanocrystal-ink based CZTSSe and CIGSSe solar cells using voltage-dependent admittance spectroscopy
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Year
: 2014DOI: 10.1109/WiPDA.2014.6964627
Keyword(s): Gallium nitride,HEMTs,Logic gates,MODFETs,MOSFET,Silicon,Switches,dead-time,gallium nitride power switching devices,synchronous boost converter
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Characterization of nanocrystal-ink based CZTSSe and CIGSSe solar cells using voltage-dependent admittance spectroscopy
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| contributor author | Xingshu Sun | |
| contributor author | Hages, C.J. | |
| contributor author | Carter, N.J. | |
| contributor author | Moore, J.E. | |
| contributor author | Agrawal, R. | |
| contributor author | Lundstrom, M. | |
| date accessioned | 2020-03-12T21:07:00Z | |
| date available | 2020-03-12T21:07:00Z | |
| date issued | 2014 | |
| identifier other | 6925415.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1037523?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | Characterization of nanocrystal-ink based CZTSSe and CIGSSe solar cells using voltage-dependent admittance spectroscopy | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8163857 | |
| subject keywords | Gallium nitride | |
| subject keywords | HEMTs | |
| subject keywords | Logic gates | |
| subject keywords | MODFETs | |
| subject keywords | MOSFET | |
| subject keywords | Silicon | |
| subject keywords | Switches | |
| subject keywords | dead-time | |
| subject keywords | gallium nitride power switching devices | |
| subject keywords | synchronous boost converter | |
| identifier doi | 10.1109/WiPDA.2014.6964627 | |
| journal title | hotovoltaic Specialist Conference (PVSC), 2014 IEEE 40th | |
| filesize | 1554633 | |
| citations | 0 |