InAs gate-all-around nanowire MOSFETs by top-down approach
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: 2014DOI: 10.1109/FMCAD.2014.6987611
Keyword(s): Cognition,Context,Model checking,Reactive power,Runtime,Skeleton,Vectors
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InAs gate-all-around nanowire MOSFETs by top-down approach
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| date accessioned | 2020-03-12T20:28:26Z | |
| date available | 2020-03-12T20:28:26Z | |
| date issued | 2014 | |
| identifier other | 6872373.pdf | |
| identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1015871?locale-attribute=en | |
| format | general | |
| language | English | |
| publisher | IEEE | |
| title | InAs gate-all-around nanowire MOSFETs by top-down approach | |
| type | Conference Paper | |
| contenttype | Metadata Only | |
| identifier padid | 8139600 | |
| subject keywords | Cognition | |
| subject keywords | Context | |
| subject keywords | Model checking | |
| subject keywords | Reactive power | |
| subject keywords | Runtime | |
| subject keywords | Skeleton | |
| subject keywords | Vectors | |
| identifier doi | 10.1109/FMCAD.2014.6987611 | |
| journal title | evice Research Conference (DRC), 2014 72nd Annual | |
| filesize | 441147 | |
| citations | 0 | |
| contributor rawauthor | Wu, H. , Lou, X.B. , Si, M. , Zhang, J.Y. , Gordon, R.G. , Tokranov, V. , Oktyabrsky, S. , Ye, P.D. |