InAs gate-all-around nanowire MOSFETs by top-down approach
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: 2014شناسه الکترونیک: 10.1109/FMCAD.2014.6987611
کلیدواژه(گان): Cognition,Context,Model checking,Reactive power,Runtime,Skeleton,Vectors
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InAs gate-all-around nanowire MOSFETs by top-down approach
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date accessioned | 2020-03-12T20:28:26Z | |
date available | 2020-03-12T20:28:26Z | |
date issued | 2014 | |
identifier other | 6872373.pdf | |
identifier uri | http://libsearch.um.ac.ir:80/fum/handle/fum/1015871 | |
format | general | |
language | English | |
publisher | IEEE | |
title | InAs gate-all-around nanowire MOSFETs by top-down approach | |
type | Conference Paper | |
contenttype | Metadata Only | |
identifier padid | 8139600 | |
subject keywords | Cognition | |
subject keywords | Context | |
subject keywords | Model checking | |
subject keywords | Reactive power | |
subject keywords | Runtime | |
subject keywords | Skeleton | |
subject keywords | Vectors | |
identifier doi | 10.1109/FMCAD.2014.6987611 | |
journal title | evice Research Conference (DRC), 2014 72nd Annual | |
filesize | 441147 | |
citations | 0 | |
contributor rawauthor | Wu, H. , Lou, X.B. , Si, M. , Zhang, J.Y. , Gordon, R.G. , Tokranov, V. , Oktyabrsky, S. , Ye, P.D. |