Adaptive identification of continuous-time switched linear and piecewise linear systems

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سال
: 2014
شناسه الکترونیک: 10.1109/SISPAD.2014.6931581
کلیدواژه(گان): Fermi level,Poole-Frenkel effect,carrier mobility,energy gap,organic field effect transistors,semiconductor device models,thin film transistors,Poole-Frenkel field effect mechanism,band gap,bias-dependent Fermi-energy movement,current transport,extended energy states,hopping mobility model,localized energy states,physical compact charge carrier mobility model,strong inversion regimes,surface potential,undoped-body organic thin-film transistors,weak inversion regime,Integrated
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