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نمایش تعداد 1-4 از 4

Hermetic packaging of Kovar alloy and low-carbon steel structure in hybrid integrated circuit (HIC) system using parallel seam welding process

نوع: Conference Paper

نویسنده : Junde Wang; Xiaoqi He; Xunping Li; Yunfei En; Xinping Zhang

ناشر: IEEE

سال: 2014

Data analysis method of the small samples and zero-failure data for space TWT accelerated life test

نوع: Conference Paper

نویسنده : Fangfang Song; Zhenwei Zhou; Shajin Li; Yunfei En; Bin Li

ناشر: IEEE

سال: 2014

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

نوع: Journal Paper

نویسنده : Chao Peng; Zhiyuan Hu; Bingxu Ning; Huixiang Huang; Zhengxuan Zhang; Dawei Bi; Yunfei En; Shichang Zou

ناشر: IEEE

سال: 2014

Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies

نوع: Journal Paper

نویسنده : Zhangang Zhang; Jie Liu; Mingdong Hou; Song Gu; Tianqi Liu; Fazhan Zhao; Chao Geng; Kai Xi; Youmei Sun; Huijun Yao; Jie Luo; Jinglai Duan; Dan Mo; Gang Liu; Zhengsheng Han; Yunfei En

ناشر: IEEE

سال: 2014

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Hermetic packaging of Kovar alloy and low-carbon steel structure in hybrid integrated circuit (HIC) system using parallel seam welding process

Data analysis method of the small samples and zero-failure data for space TWT accelerated life test

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies

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Hermetic packaging of Kovar alloy and low-carbon steel structure in hybrid integrated circuit (HIC) system using parallel seam welding process

Data analysis method of the small samples and zero-failure data for space TWT accelerated life test

Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies