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نمایش تعداد 1-10 از 42

Applying Kansei Engineering to Design an Affective Briefing Presentation for the Elders

نوع: Journal Paper

نویسنده : Pai Hsun Chen; Shiang Ru Huang

سال: 2014

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Fabrication of synthesized PCL‐PEG‐PCL tissue engineering scaffolds using an air pressure‐aided deposition system

نوع: Journal Paper

نویسنده : Cho‐Pei Jiang; Jyun‐Ru Huang; Ming‐Fa Hsieh

سال: 2011

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Energy-Efficient Monitoring in Software Defined Wireless Sensor Networks Using Reinforcement Learning: A Prototype

نوع: Journal Paper

نویسنده : Ru Huang; Xiaoli Chu; Jie Zhang; Yu Hen Hu

سال: 2015

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Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

نوع: Journal Paper

نویسنده : Cheng-Haw Lee; Wei-Ping Chen; Ru-Huang Lee

سال: 2006

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Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

نوع: Journal Paper

نویسنده : Cheng-Haw Lee; Wei-Ping Chen; Ru-Huang Lee

سال: 2007

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Improving analog/RF performance of multi-gate devices through multi-dimensional design optimization with awareness of variations and parasitics

نوع: Journal Paper

نویسنده : Yuchao Liu; Ru Huang; Runsheng Wang; Jiaojiao Ou; Yangyuan Wang

سال: 2012

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Investigation on random charging/discharging of single oxide trap in SiO<inf>2</inf>: An ab -initio study

نوع: Conference Paper

نویسنده : Jingwei Ji; Runsheng Wang; Yingxin Qiu; Ru Huang

ناشر: IEEE

سال: 2014

A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

نوع: Journal Paper

نویسنده : Yingxin Qiu; Runsheng Wang; Qianqian Huang; Ru Huang

ناشر: IEEE

سال: 2014

A closed-form capacitance model for tunnel FETs with explicit surface potential solutions

نوع: Journal Paper

نویسنده : Jiaxin Wang; Chunlei Wu; Qianqian Huang; Chao Wang; Ru Huang

سال: 2014

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Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor

نوع: Journal Paper

نویسنده : Yingxin Qiu; Runsheng Wang; Qianqian Huang; Ru Huang

سال: 2014

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Applying Kansei Engineering to Design an Affective Briefing Presentation for the Elders

Fabrication of synthesized PCL‐PEG‐PCL tissue engineering scaffolds using an air pressure‐aided deposition system

Energy-Efficient Monitoring in Software Defined Wireless Sensor Networks Using Reinforcement Learning: A Prototype

Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Improving analog/RF performance of multi-gate devices through multi-dimensional design optimization with awareness of variations and parasitics

Investigation on random charging/discharging of single oxide trap in SiO<inf>2</inf>: An ab -initio study

A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

A closed-form capacitance model for tunnel FETs with explicit surface potential solutions

Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor

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Applying Kansei Engineering to Design an Affective Briefing Presentation for the Elders

Fabrication of synthesized PCL‐PEG‐PCL tissue engineering scaffolds using an air pressure‐aided deposition system

Energy-Efficient Monitoring in Software Defined Wireless Sensor Networks Using Reinforcement Learning: A Prototype

Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Estimation of groundwater recharge using water balance coupled with base-flow-record estimation and stable-base-flow analysis

Improving analog/RF performance of multi-gate devices through multi-dimensional design optimization with awareness of variations and parasitics

Investigation on random charging/discharging of single oxide trap in SiO<inf>2</inf>: An ab -initio study

A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

A closed-form capacitance model for tunnel FETs with explicit surface potential solutions

Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor