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نویسنده : Qinghua Han; Thomas C. U. Tromm; Michael Hoffmann; Paulus Aleksa; Uwe Schroeder; Juergen Schubert; Siegfried Mantl; Qing-Tai Zhao

سال: 2018

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Static noise margin analysis of 8T TFET SRAM cells using a 2D compact model adapted to measurement data of fabricated TFET devices

نوع: Journal Paper

نویسنده : Fabian Horst; Michael Graef; Fabian Hosenfeld; Atieh Farokhnejad; Gia Vinh Luong; Qing-Tai Zhao; Benjamin Iniguez; Alexander Kloes

سال: 2017

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Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

نوع: Journal Paper

نویسنده : Sebastiano Strangio; Pierpaolo Palestri; DAVID Esseni; Luca Selmi; Felice Crupi; Simon Richter; Qing-Tai Zhao; Siegfried Mantl

سال: 2015

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Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

نوع: Journal Paper

نویسنده : Schmidt, Martin; Schafer, Andreas; Minamisawa, R.A.; Buca, Dan; Trellenkamp, Stefan; Hartmann, J.-M.; Qing-Tai Zhao; Mantl, Siegfried

ناشر: IEEE

سال: 2014

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

نوع: Journal Paper

نویسنده : Lars Knoll; Qing-Tai Zhao; Alexander Nichau; Stefan Trellenkamp; Simon Richter; Anna Schafer; David Esseni; Luca Selmi; Konstantin K. Bourdelle; Siegfried Mantl

سال: 2013

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2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs

Investigation of band-to-band tunneling parameters in sige by using MOSFET GIDL current analysis

Analysis of GeSn-SiGeSn hetero-tunnel FETs

Experimental demonstration of improved analog device performance in GAA-NW-TFETs

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors

Static noise margin analysis of 8T TFET SRAM cells using a 2D compact model adapted to measurement data of fabricated TFET devices

Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

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2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs

Investigation of band-to-band tunneling parameters in sige by using MOSFET GIDL current analysis

Analysis of GeSn-SiGeSn hetero-tunnel FETs

Experimental demonstration of improved analog device performance in GAA-NW-TFETs

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors

Static noise margin analysis of 8T TFET SRAM cells using a 2D compact model adapted to measurement data of fabricated TFET devices

Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors