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نمایش تعداد 1-7 از 7

Predictable Behavior: Behavioral Modeling from Measured Data

نوع: Journal Paper

نویسنده : Pedro, Jose C.; Reis Cunha, Telmo

ناشر: IEEE

سال: 2014

A Novel Time-Domain CAD Technique Based on Automatic Time-Slot Division for the Numerical Simulation of Highly Nonlinear RF Circuits

نوع: Journal Paper

نویسنده : Ferreira, Denzil; Oliveira, Jorge F.; Pedro, Jose C.

ناشر: IEEE

سال: 2014

Soft compression and the origins of nonlinear behavior of GaN HEMTs

نوع: Conference Paper

نویسنده : Pedro, Jose C.; Nunes, Luis C.; Cabral, Pedro M.

ناشر: IEEE

سال: 2014

Switching Noise Improvement of a Limit-Cycle Amplifier Using a Negative Hysteresis Relay

نوع: Journal Paper

نویسنده : Duarte, Manuel J.; Cabral, Pedro M.; Pedro, Jose C.

ناشر: IEEE

سال: 2014

AM/AM and AM/PM Distortion Generation Mechanisms in Si LDMOS and GaN HEMT Based RF Power Amplifiers

نوع: Journal Paper

نویسنده : Cotimos Nunes, Luis; Cabral, Pedro M.; Pedro, Jose C.

ناشر: IEEE

سال: 2014

Envelope Modulator Selection for RF Carrier Phase-Burst Transmitters

نوع: Journal Paper

نویسنده : Pires, Sergio C.; Cabral, Pedro M.; Pedro, Jose C.

ناشر: IEEE

سال: 2014

Polynomials and LUTs in PA Behavioral Modeling: A Fair Theoretical Comparison

نوع: Journal Paper

نویسنده : Barradas, Filipe M.; Cunha, Telmo R.; Lavrador, Pedro M.; Pedro, Jose C.

ناشر: IEEE

سال: 2014

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Predictable Behavior: Behavioral Modeling from Measured Data

A Novel Time-Domain CAD Technique Based on Automatic Time-Slot Division for the Numerical Simulation of Highly Nonlinear RF Circuits

Soft compression and the origins of nonlinear behavior of GaN HEMTs

Switching Noise Improvement of a Limit-Cycle Amplifier Using a Negative Hysteresis Relay

AM/AM and AM/PM Distortion Generation Mechanisms in Si LDMOS and GaN HEMT Based RF Power Amplifiers

Envelope Modulator Selection for RF Carrier Phase-Burst Transmitters

Polynomials and LUTs in PA Behavioral Modeling: A Fair Theoretical Comparison

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Predictable Behavior: Behavioral Modeling from Measured Data

A Novel Time-Domain CAD Technique Based on Automatic Time-Slot Division for the Numerical Simulation of Highly Nonlinear RF Circuits

Soft compression and the origins of nonlinear behavior of GaN HEMTs

Switching Noise Improvement of a Limit-Cycle Amplifier Using a Negative Hysteresis Relay

AM/AM and AM/PM Distortion Generation Mechanisms in Si LDMOS and GaN HEMT Based RF Power Amplifiers

Envelope Modulator Selection for RF Carrier Phase-Burst Transmitters

Polynomials and LUTs in PA Behavioral Modeling: A Fair Theoretical Comparison