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نمایش تعداد 1-10 از 10

Selected Semiconductor Research

نوع: Ebook

نویسنده : Ming-Fu Li

ناشر: Imperial College Press

سال: 2011

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Challenges for InGaAs n-MOSFETs in the future generation sub-10nm CMOS logic devices

نوع: Conference Paper

نویسنده : Ming-Fu Li; Shenwei Li; Daming Huang; Ye, P.D.

ناشر: IEEE

سال: 2014

Characteristics of low frequency noise in n+Si-HfO<inf>2</inf>-Ni resistive random access memory

نوع: Conference Paper

نویسنده : Yadong Zhao; Daming Huang; Dongyi Lu; Tran Xuan Anh; Hongyu Yu; Ming-Fu Li

ناشر: IEEE

سال: 2014

Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

نوع: Journal Paper

نویسنده : Wei Cao; Yao, C.J.; Jiao, G.F.; Daming Huang; Yu, H.Y.; Ming-Fu Li

سال: 2011

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Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

نوع: Journal Paper

نویسنده : Ming-Fu Li; Guangfan Jiao; Yaodong Hu; Yi Xuan; Daming Huang; Peide D. Ye

سال: 2013

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Shoot recovery and genetic integrity of Chrysanthemum morifolium shoot tips following cryopreservation by droplet-vitrification

نوع: Journal Paper

نویسنده : Ren-Rui Wang; Xiao-Xia Gao; Long Chen; Liu-Qing Huo; Ming-Fu Li; Qiao-Chun Wang

سال: 2014

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n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport

نوع: Journal Paper

نویسنده : King-Jien Chui; Kah-Wee Ang; Narayanan Balasubramanian; Ming-Fu Li; Ganesh S. Samudra; Yee-Chia Yeo

سال: 2007

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Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors

نوع: Journal Paper

نویسنده : G F Jiao; Z X Chen; H Y Yu; X Y Huang; D M Huang; N Singh; G Q Lo; D.-L Kwong; Ming-Fu Li

سال: 2010

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Investigation of tunneling field effect transistor reliability

نوع: Journal Paper

نویسنده : G. F. Jiao; X. Y. Huang; Z. X. Chen; W. Cao; D. M. Huang; H. Y. Yu; N. Singh; G. Q. Lo; D.-L. Kwong; Ming-Fu Li

سال: 2010

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Investigations of Conduction Mechanisms of the Self-Rectifying n+Si-HfO2–Ni RRAM Devices

نوع: Journal Paper

نویسنده : Dongyi Lu; Yadong Zhao; Tran Xuan Anh; Yu Hong Yu; Daming Huang; Yinyin Lin; Shi-Jin Ding; Peng-Fei Wang; Ming-Fu Li

ناشر: IEEE

سال: 2014

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Selected Semiconductor Research

Challenges for InGaAs n-MOSFETs in the future generation sub-10nm CMOS logic devices

Characteristics of low frequency noise in n<sup>+</sup>Si-HfO<inf>2</inf>-Ni resistive random access memory

Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

Shoot recovery and genetic integrity of Chrysanthemum morifolium shoot tips following cryopreservation by droplet-vitrification

n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport

Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors

Investigation of tunneling field effect transistor reliability

Investigations of Conduction Mechanisms of the Self-Rectifying n<sup>+</sup>Si-HfO<sub>2</sub>–Ni RRAM Devices

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Selected Semiconductor Research

Challenges for InGaAs n-MOSFETs in the future generation sub-10nm CMOS logic devices

Characteristics of low frequency noise in n<sup>+</sup>Si-HfO<inf>2</inf>-Ni resistive random access memory

Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

Reliability of High-Mobility InGaAs Channel n-MOSFETs Under BTI Stress

Shoot recovery and genetic integrity of Chrysanthemum morifolium shoot tips following cryopreservation by droplet-vitrification

n-MOSFET With Silicon–Carbon Source/Drain for Enhancement of Carrier Transport

Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors

Investigation of tunneling field effect transistor reliability

Investigations of Conduction Mechanisms of the Self-Rectifying n<sup>&#x002B;</sup>Si-HfO<sub>2</sub>&#x2013;Ni RRAM Devices

Investigations of Conduction Mechanisms of the Self-Rectifying n<sup>+</sup>Si-HfO<sub>2</sub>–Ni RRAM Devices