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نمایش تعداد 1-5 از 5

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

نوع: Journal Paper

نویسنده : Jin Chen; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Fleetwood, D.M.; Schrimpf, R.D.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.

ناشر: IEEE

سال: 2014

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

نوع: Journal Paper

نویسنده : En Xia Zhang; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Funkhouser, Erik D.; Kai Ni; Ball, D.R.; McCurdy, Michael W.; Fleetwood, D.M.; Reed, R.A.; Alles, Michael L.; Schrimpf, R.D.; Linten, D.; Mitard, J.

ناشر: IEEE

سال: 2014

Single-Event Transient Response of InGaAs MOSFETs

نوع: Journal Paper

نویسنده : Kai Ni; En Xia Zhang; Hooten, N.C.; Bennett, W.G.; McCurdy, Michael W.; Sternberg, A.L.; Schrimpf, R.D.; Reed, R.A.; Fleetwood, D.M.; Alles, Michael L.; Tae-Woo Kim; Jianqiang Lin; del Alamo, Jesus /A/.

ناشر: IEEE

سال: 2014

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

نوع: Journal Paper

نویسنده : Cardoso, Adilson S.; Chakraborty, Partha S.; Karaulac, Nedeljko; Fleischhauer, David M.; Lourenco, Nelson E.; Fleetwood, Zachary E.; Omprakash, Anup P.; England, Troy D.; Jung, Sanghyuk; Najafizadeh, Laleh; Roche, Nicholas J.-H; Khachatrian, Ani; Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen P.; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Reed, R.A.; Fleetwood, D.M.; Paki-Amouzou, Pauline; Cressler, John D.

ناشر: IEEE

سال: 2014

TID and Displacement Damage Resilience of 1T1R <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> Resistive Memories

نوع: Journal Paper

نویسنده : Weeden-Wright, Stephanie L.; Bennett, W.G.; Hooten, N.C.; En Xia Zhang; McCurdy, Michael W.; King, Michael P.; Weller, Robert /A/.; Mendenhall, Marcus H.; Alles, Michael L.; Linten, D.; Jurczak, Malgorzata; Degraeve, Robin; Fantini, Andrea; Reed, R.A.; Fleetwood, D.M.; Schrimpf, R.D.

ناشر: IEEE

سال: 2014

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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Single-Event Transient Response of InGaAs MOSFETs

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

TID and Displacement Damage Resilience of 1T1R <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> Resistive Memories

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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Single-Event Transient Response of InGaAs MOSFETs

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

TID and Displacement Damage Resilience of 1T1R <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> Resistive Memories