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RISComparison of low field electron transport characteristics in Ge and Si semiconductors and effects of neutron energy deposition on their crystal structure
The transport of minority electrons up to 600 K temperature in silicon and germanium have been
investigated, using an iterative approach. Theoretical expressions for electron scattering which take
into account ...
Electronic Transport Properties in InN Submicron n+-n-n+ Diode with InGaN Heterojunction Cathode
Ensemble Monte Carlo simulations have been
performed to model electron transport in wurtzite phase
InN diode with a InGaN heterojunction cathode. The hot
electron injection through the heterojunction ...
A new calculation method for thermal and electical characterization in CdTe and CdSe semiconductors
A new calculation method has been developed and used to model electron transport properties in
semiconductor devices under thermal and electrical applications. Using the relaxation-time
approximation, the ...
A New Study of Polaron Scattering Phenomena in Bulk Semiconductor Devices
It is shown that polaron scattering affects
substantially the low-field electrical transport electron in
bulk materials. It is found that the electron mobility
decreases monotonically as the temperature ...
Three-Valley Model For The Study Of Electron Transport Properties At Very High Electric Field In Bulk GaSb, Ga0.5Sb0.5As and GaAs Materials
Electron drift velocity simulation results are
presented for bulk GaSb, Ga0.5Sb0.5As and GaAs based on a
three-valley Monte Carlo model. Our velocity-field results at 300
K are in good agreement with ...
Calculation of High Field Electron Transport Properties in GaSb and GaAs
Electron transport properties in GaSb and
GaAs are calculated for different temperature, doping
dependencies at high electric field applications. The
calculations are performed using a three valleys ...
Two-dimensional particle modeling of submicrometer ZnO MESFET based on an ensemble Monte Carlo calculation including five-valley band structure model
A Monte Carlo method has been developed for the study of electron transport properties in ZnO
MESFET for high field, using a five-valley conduction band model. The effects of upper valleys on the
characteristics ...
Transient and Steady-state Electron Transport Properties in Bulk Doped Ternary Nitride Materials Using an Ensemble Monte Carlo Method
An ensemble Monte Carlo simulation is used to compare transient and steady-state electron transport in
Ga0.2In0.8N, Al0.2Ga0.8N and Al0.2In0.8N materials. Three valleys model at the Γ, U and K are ...
A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method
Ensemble Monte Carlo simulations have been carried out to investigate the effects of Gate length and different sourcedrain
bias on the characteristics of wurtzite SiC MOSFETs. Electronic states within the conduction ...
Thermoelectric power and low-field electron mobility in AlxGa1−xN lattice-matched to GaN
The results of thermoelectric power and electron drift mobility in Al xGa1−xN lattice-matched to GaN are
calculated for different temperatures, free-electron concentrations and compositions. The two-mode nature
of ...