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نمایش تعداد 1-4 از 4

Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

نوع: Journal Paper

نویسنده : Jian-Kai Liou; Chun-Chia Chen; Po-Cheng Chou; Zong-Jie Tsai; Yu-Chih Chang; Wen-Chan Liu

ناشر: IEEE

سال: 2014

Performance Enhancement on an InGaP/InGaAs PHEMT With an Electrophoretic Deposition Gate Structure

نوع: Journal Paper

نویسنده : Chun-Chia Chen; Huey-Ing Chen; Po-Cheng Chou; Jian-Kai Liou; Yung-Jen Chiou; Jung-Hui Tsai; Wen-Chau Liu

ناشر: IEEE

سال: 2014

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype="inline"> <img src="/images/tex/16785.gif" alt="{\\rm SiO}_{2}"> </formula> Nanosphere Monolayer

نوع: Journal Paper

نویسنده : Jian-Kai Liou; Po-Cheng Chou; Chun-Chia Chen; Yu-Chih Chang; Wei-Chou Hsu; Shiou-Ying Cheng; Jung-Hui Tsai; Wen-Chan Liu

ناشر: IEEE

سال: 2014

A 0.2nJ/pixel 4K 60fps Main-10 HEVC decoder with multi-format capabilities for UHD-TV applications

نوع: Conference Paper

نویسنده : Chi-Cheng Ju; Tsu-Ming Liu; Yung-Chang Chang; Chih-Ming Wang; Hue-Min Lin; Chia-Yun Cheng; Chun-Chia Chen; Min-Hao Chiu; Sheng-Jen Wang; Ping Chao; Meng-Jye Hu; Fu-Chun Yeh; Shun-Hsiang Chuang; Hsiu-Yi Lin; Ming-Long Wu; Che-Hong Chen; Chung-Hung Tsai

ناشر: IEEE

سال: 2014

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Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

Performance Enhancement on an InGaP/InGaAs PHEMT With an Electrophoretic Deposition Gate Structure

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype="inline"> <img src="/images/tex/16785.gif" alt="{\\rm SiO}_{2}"> </formula> Nanosphere Monolayer

A 0.2nJ/pixel 4K 60fps Main-10 HEVC decoder with multi-format capabilities for UHD-TV applications

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Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

Performance Enhancement on an InGaP/InGaAs PHEMT With an Electrophoretic Deposition Gate Structure

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype="inline"> <img src="/images/tex/16785.gif" alt="{\\rm SiO}_{2}"> </formula> Nanosphere Monolayer

A 0.2nJ/pixel 4K 60fps Main-10 HEVC decoder with multi-format capabilities for UHD-TV applications