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نمایش تعداد 1-10 از 11

Novel small signal modeling and control of an LLC resonant converter

نوع: Conference Paper

نویسنده : Cheng, B. , Musavi, F. , Dunford, W.G.

ناشر: IEEE

سال: 2014

Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

نوع: Conference Paper

نویسنده : Liping Wang; Brown, A.; Cheng, B.; Asenov, A.

ناشر: IEEE

سال: 2014

Dose distribution considerations of medium energy electron beams at extended source-to-surface distance

نوع: Journal Paper

نویسنده : Cheng B. Saw; Komanduri M. Ayyangar; Todd Pawlicki; Leroy J. Korb

سال: 1995

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Electroluminescence intensity analysis of neutral bulk and space charge region collection effects on large-area CIGS module performance

نوع: Conference Paper

نویسنده : Guozhen Yue; Dingyuan Lu; Cheng, B.; Baosheng Sang; Stanbery, B.J.

ناشر: IEEE

سال: 2014

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

نوع: Conference Paper

نویسنده : Wang, L.; Brown, A.R.; Nedjalkov, M.; Alexander, C.; Cheng, B.; Millar, C.; Asenov, A.

ناشر: IEEE

سال: 2014

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

نوع: Conference Paper

نویسنده : Wang, L.; Brown, A.R.; Nedjalkov, M.; Alexander, C.; Cheng, B.; Millar, C.; Asenov, A.

ناشر: IEEE

سال: 2014

Commissioning and quality assurance for Mlc-Based IMRT

نوع: Journal Paper

نویسنده : Cheng B Saw; Komanduri M Ayyangar; Weining Zhen; Robert B Thompson; Charles A Enke

سال: 2001

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Variability-aware compact model strategy for 20-nm bulk MOSFETs

نوع: Conference Paper

نویسنده : Xingsheng Wang; Reid, D.; Liping Wang; Burenkov, A.; Millar, C.; Cheng, B.; Lange, A.; Lorenz, J.; Baer, E.; Asenov, A.

ناشر: IEEE

سال: 2014

The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs

نوع: Conference Paper

نویسنده : Adamu-Lema, F.; Amoroso, S.M.; Wang, X.; Cheng, B.; Shifren, L.; Aitken, R.; Sinha, S.; Yeric, G.; Asenov, A.

ناشر: IEEE

سال: 2014

Predictive simulation of future CMOS technologies and their impact on circuits

نوع: Conference Paper

نویسنده : Asenov, A.; Cheng, B.; Adamu-Lema, F.; Shifren, L.; Sinha, S.; Riddet, C.; Alexander, C.; Brown, A.R.; Wang, X.; Amoroso, S.M.

ناشر: IEEE

سال: 2014

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Novel small signal modeling and control of an LLC resonant converter

Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

Dose distribution considerations of medium energy electron beams at extended source-to-surface distance

Electroluminescence intensity analysis of neutral bulk and space charge region collection effects on large-area CIGS module performance

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

Commissioning and quality assurance for Mlc-Based IMRT

Variability-aware compact model strategy for 20-nm bulk MOSFETs

The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs

Predictive simulation of future CMOS technologies and their impact on circuits

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Novel small signal modeling and control of an LLC resonant converter

Simulation of 3D FinFET doping profiles introduced by ion implantation and the impact on device performance

Dose distribution considerations of medium energy electron beams at extended source-to-surface distance

Electroluminescence intensity analysis of neutral bulk and space charge region collection effects on large-area CIGS module performance

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

Commissioning and quality assurance for Mlc-Based IMRT

Variability-aware compact model strategy for 20-nm bulk MOSFETs

The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs

Predictive simulation of future CMOS technologies and their impact on circuits